2023
DOI: 10.1016/j.diamond.2023.110216
|View full text |Cite
|
Sign up to set email alerts
|

Multi-frequency polarization and electro-optical modulator based on triple plasmon- induced transparency in monolayer graphene metamaterials

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3

Citation Types

0
3
0

Year Published

2023
2023
2024
2024

Publication Types

Select...
8

Relationship

1
7

Authors

Journals

citations
Cited by 29 publications
(3 citation statements)
references
References 54 publications
0
3
0
Order By: Relevance
“…Subsequently, in October 2022, Zhou et al showcased a five-frequency switching mechanism using x-polarized light within a bilayer graphene configuration [41]. Most recently, in July 2023, Meng et al introduced a multi-frequency switching strategy using x-polarized light, integrated into a structure with four graphene strips [42]. However, real-world light sources typically emit light that is not restricted to a single polarization direction.…”
Section: Introductionmentioning
confidence: 99%
“…Subsequently, in October 2022, Zhou et al showcased a five-frequency switching mechanism using x-polarized light within a bilayer graphene configuration [41]. Most recently, in July 2023, Meng et al introduced a multi-frequency switching strategy using x-polarized light, integrated into a structure with four graphene strips [42]. However, real-world light sources typically emit light that is not restricted to a single polarization direction.…”
Section: Introductionmentioning
confidence: 99%
“…Meng et al presented a composite structure of horizontal and vertical graphene strips. 31 The structure can generate a triple PIT effect based on the coupling of three bright modes and one dark mode.…”
Section: Introductionmentioning
confidence: 99%
“…Graphene has revealed numerous unique physical and electrical properties [19,20], including high mobility and transparent flexibility, making it suitable as an electrode [21]. Its chemical potential and Fermi level can be controlled by the gate voltage [22]. Therefore, the physical properties of the device at the metal-semiconductor interface will be regulated by the gate voltage.…”
Section: Introductionmentioning
confidence: 99%