2010
DOI: 10.1016/j.microrel.2010.01.040
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Multi-gate non-volatile memories with nanowires as charge storage material

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Cited by 6 publications
(2 citation statements)
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“…Nanorods have gained significant popularity in spintronics devices due to their magnetic anisotropy and significantly larger interfacial area compared to spherical shapes [149][150][151][152]. The enhanced interfacial area of nanorods introduces additional grain boundaries, which can contribute to an increase in TMR.…”
Section: Effect Of Shape Anisotropymentioning
confidence: 99%
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“…Nanorods have gained significant popularity in spintronics devices due to their magnetic anisotropy and significantly larger interfacial area compared to spherical shapes [149][150][151][152]. The enhanced interfacial area of nanorods introduces additional grain boundaries, which can contribute to an increase in TMR.…”
Section: Effect Of Shape Anisotropymentioning
confidence: 99%
“…The enhanced interfacial area of nanorods introduces additional grain boundaries, which can contribute to an increase in TMR. Consequently, nanorods and nanowires offer an added advantage over conventional isotropic shapes [149,150]. Our group conducted a study on the TMR characteristics of Fe 3 O 4 nanorod assemblies.…”
Section: Effect Of Shape Anisotropymentioning
confidence: 99%