Multi-Layer SnSe Nanoflake Field-Effect Transistors with Low-Resistance Au Ohmic Contacts

Cho, Sang-Hyeok; Cho, Kwanghee; Park, No‐Won; Park, Soonyong; Koh, Jung‐Hyuk; Lee, Sang-Kwon

doi:10.1186/s11671-017-2145-2

Cited by 26 publications

(11 citation statements)

References 45 publications

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“…As expected, the field effect mobility drops rapidly in the absence of a hole accumulation layer at the SnSe/SiO 2 interface due to ineffective modulation of carrier density within the bulk of the exfoliated SnSe flake. The observed field effect mobility in exfoliated SnSe is an order of magnitude greater than that reported to date [21][22][23].…”

Section: Field Effectmentioning

confidence: 63%

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Quasi-two-dimensional thermoelectricity in SnSe

et al. 2018

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Stannous selenide is a layered semiconductor that is a polar analogue of black phosphorus, and of great interest as a thermoelectric material. Unusually, hole doped SnSe supports a large Seebeck coefficient at high conductivity, which has not been explained to date. Angle resolved photo-emission spectroscopy, optical reflection spectroscopy and magnetotransport measurements reveal a multiplevalley valence band structure and a quasi two-dimensional dispersion, realizing a Hicks-Dresselhaus thermoelectric contributing to the high Seebeck coefficient at high carrier density. We further demonstrate that the hole accumulation layer in exfoliated SnSe transistors exhibits a field effect mobility of up to 250 cm 2 /Vs at T = 1.3 K. SnSe is thus found to be a high quality, quasi twodimensional semiconductor ideal for thermoelectric applications. arXiv:1802.08069v1 [cond-mat.mtrl-sci]

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Section: Field Effectmentioning

confidence: 63%

“…Ultra-thin films of poly-crystalline SnSe have been prepared by liquid phase deposition with field effect mobilities of 10 cm 2 /Vs [20]. Vapour phase deposition has been used to synthesize ultra-thin SnSe crystals with field effect mobilities of 1.5 − 10 cm 2 /Vs [21][22][23].…”

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confidence: 99%

Quasi-two-dimensional thermoelectricity in SnSe

et al. 2018

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“…The A 3g mode showed weaker anisotropy and the maximum Raman intensity turned toward the 90 or 270° directions (armchair direction). Based on the above results, the polarization-dependent Raman intensities were correlated with the crystallographic orientation. , The short side was identified as the zigzag edge along the crystalline b -axis orientation and defined as the 0° angle. The long side was intended to the armchair direction along the c -axis.…”

Section: Resultsmentioning

confidence: 99%

“…More importantly, common 2D transition-metal dichalcogenides showed an in-plane isotropic feature, , while 2D SnSe with a puckered honeycomb structure possessed a lower lattice symmetry . Because of the structural anisotropy, 2D SnSe crystals have exhibited unique advantages, including highly anisotropic valence bands, crystal orientation-dependent high charge carrier mobility (7835 cm 2 V –1 s –1 ), and linear optical absorption at 1.30 eV. − The layered and anisotropic crystal structure of 2D SnSe has motivated us to explore its varied properties along different axial directions. Recently, a breakthrough was revealed in the strong anisotropic thermoelectric properties of SnSe.…”

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confidence: 99%

Modulated Anisotropic Growth of 2D SnSe Based on the Difference in a/b/c-Axis Edge Atomic Structures

et al. 2021

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The controlled anisotropic growth of two-dimensional (2D) materials along a specific crystal axis is very crucial to explore the axis-dependent performance, which derives from the difference of atom arrangement in different crystal axes, while the relevant research is still insufficient. Here, we demonstrated a systematic investigation on the controllable anisotropic growth of 2D SnSe along different axis directions from both the experimental and theoretical perspectives. The anisotropy growth of 2D SnSe was attributed to the difference in atomic structures and bonding features between the zigzag edge (along the b-axis) and armchair edge (along the c-axis), as well as the chemical inertness of the base plane in the a-axis. Scanning transmission electron microscopy (STEM) images further verified that the long side of rectangular 2D SnSe is an armchair edge and the short side is a zigzag edge. The growth rates along the b-and c-axes could be effectively adjusted by hydrogen, attributed to the difference in desorption energy between hydrogen and different edge structures. The higher hydrogen concentration led to a shorter b-axis and a longer c-axis. The morphologies of 2D SnSe could be regulated in the range from square nanosheets to linear nanowires. In terms of the a-axis, 2D SnSe was precisely limited to a minimum value of 7.42 nm via a one-step rapid cooling method and could be further thinned to a bilayer using a two-step method with an additional annealing etching step. This study has demonstrated a facile strategy toward the structure-dependent controllable growth of 2D anisotropic materials, which shed new light on the orientation judgment and axisdependent mechanism of the crystal axis of anisotropic materials.

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“…For experiments concerning 2D materials, mechanical exfoliation is usually the most straightforward approach to create atomically thin flakes, especially in the early stage of material characterization. However, simple mechanical exfoliation experiments using standard scotch tape methods have only yielded MX flakes that are tens of nanometers thick, 45,46 far from the 2D limit. Using liquid phase exfoliation, during which bulk MX materials are ultrasonicated in various solvents, several-ML thick MX flakes have been obtained.…”

Section: Introductionmentioning

confidence: 99%

Experimental formation of monolayer group-IV monochalcogenides

Chang,

Parkin

2020

Preprint

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Monolayer group-IV monochalcogenides (MX, M = Ge, Sn, Pb; X = S, Se, Te) are a family of novel two-dimensional (2D) materials that have atomic structures closely related to that of the staggered black phosphorus lattice. The structure of most monolayer MX materials exhibits a broken inversion symmetry, and many of them exhibit ferroelectricity with a reversible in-plane electric polarization. A further consequence of the noncentrosymmetric structure is that when coupled with strong spin-orbit coupling, many MX materials are promising for the future applications in non-linear optics, photovoltaics, spintronics and valleytronics. Nevertheless, because of the relatively large exfoliation energy, the creation of monolayer MX materials is not easy, which hinders the integration of these materials into the fast-developing field of 2D material heterostructures. In this Perspective, we review recent developments in experimental routes to the creation of monolayer MX, including molecular beam epitaxy and two-step etching methods. Other approaches that could be used to prepare monolayer MX are also discussed, such as liquid phase exfoliation and solution phase synthesis. A quantitative comparison between these different methods is also presented.

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Multi-Layer SnSe Nanoflake Field-Effect Transistors with Low-Resistance Au Ohmic Contacts

Cited by 26 publications

References 45 publications

Quasi-two-dimensional thermoelectricity in SnSe

Quasi-two-dimensional thermoelectricity in SnSe

Modulated Anisotropic Growth of 2D SnSe Based on the Difference in a/b/c-Axis Edge Atomic Structures

Experimental formation of monolayer group-IV monochalcogenides

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