Multi-level characteristics of TiOx transparent non-volatile resistive switching device by embedding SiO2 nanoparticles

Abstract

TiOx-based resistive switching devices have recently attracted attention as a promising candidate for next-generation non-volatile memory devices. A number of studies have attempted to increase the structural density of resistive switching devices. The fabrication of a multi-level switching device is a feasible method for increasing the density of the memory cell. Herein, we attempt to obtain a non-volatile multi-level switching memory device that is highly transparent by embedding SiO2 nanoparticles (NPs) into the TiOx matrix (TiOx@SiO2 NPs). The fully transparent resistive switching device is fabricated with an ITO/TiOx@SiO2 NPs/ITO structure on glass substrate, and it shows transmittance over 95% in the visible range. The TiOx@SiO2 NPs device shows outstanding switching characteristics, such as a high on/off ratio, long retention time, good endurance, and distinguishable multi-level switching. To understand multi-level switching characteristics by adjusting the set voltages, we analyze the switching mechanism in each resistive state. This method represents a promising approach for high-performance non-volatile multi-level memory applications.

Multi-level resistive switching in hafnium-oxide-based devices for neuromorphic computing

“…The binary composition itself can be a potential benefit over other more complex materials. Some of these oxides already appeared in the discussion above when they were combined with hafnium oxide, but gradual RS has also been observed in standalone aluminum oxide [103], tantalum oxide [104], titanium oxide [105,106], tungsten oxide [107], and various combinations thereof [108][109][110]. Further recent examples include silicon oxide [111], manganese oxide [112], cobalt oxide [113,114], zinc oxide [115,116], yttrium oxide [117], and nickel oxide [118].…”