Multi-level phase-change memory with ultralow power consumption and resistance drift

Liu, Bin; Li, Kaiqi; Liu, Wanliang; Zhou, Jian; Wu, Liangcai; Zhang, Song; Elliott, S. R.; Sun, Zhimei

doi:10.1016/j.scib.2021.07.018

Cited by 57 publications

(29 citation statements)

References 43 publications

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“…Such a low E RESET suggests that the effective switching volume always remains small on nanoscale, further supporting the cbPCM switching mechanism. Moreover, as compared in Figure 5 with literature data plotted as a function of contact area size, [ 12 , 15 , 20 , 21 , 22 , 23 , 24 , 25 , 26 , 27 , 28 , 29 , 30 , 31 , 32 , 33 , 34 , 35 , 50 , 65 ] our cbPCM devices not only have achieved an unprecedented low power consumption in comparison with all devices of similar contact sizes, but also clearly breaks the previously established scaling (dashed line) of energy with the contact area. This is a major advantage of our heterogeneous alloy approach, as it achieves the minimization of the effective switching volume without the need to miniaturize the size of the electrodes or PCM cell, greatly reducing the complexity and costs for device fabrication.…”

Section: Resultsmentioning

confidence: 99%

“…Typical PCM devices require tens of picojoule to nanojoule and a large current density of >1 MA cm −2 for each RESET operation. [ 16 ] To reduce the RESET energy E RESET , various approaches have been developed, including materials optimization and design, [ 12 , 17 , 18 , 19 , 20 , 21 ] interface and electrode engineering, [ 22 , 23 , 24 , 25 ] nanowires, [ 26 , 27 ] nanocrystals, [ 28 , 29 ] as well as superlattices. [ 30 , 31 , 32 , 33 ] Yet the power consumption remained on the order of multiple picojoules or the RESET current ranged from tens to hundreds of µA.…”

Section: Introductionmentioning

confidence: 99%

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Designing Conductive‐Bridge Phase‐Change Memory to Enable Ultralow Programming Power

Yang

Wang

et al. 2022

Advanced Science

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Phase‐change material (PCM) devices are one of the most mature nonvolatile memories. However, their high power consumption remains a bottleneck problem limiting the data storage density. One may drastically reduce the programming power by patterning the PCM volume down to nanometer scale, but that route incurs a stiff penalty from the tremendous cost associated with the complex nanofabrication protocols required. Instead, here a materials solution to resolve this dilemma is offered. The authors work with memory cells of conventional dimensions, but design/exploit a PCM alloy that decomposes into a heterogeneous network of nanoscale crystalline domains intermixed with amorphous ones. The idea is to confine the subsequent phase‐change switching in the interface region of the crystalline nanodomain with its amorphous surrounding, forming/breaking “nano‐bridges” that link up the crystalline domains into a conductive path. This conductive‐bridge switching mechanism thus only involves nanometer‐scale volume in programming, despite of the large areas in contact with the electrodes. The pore‐like devices based on spontaneously phase‐separated Ge13Sb71O16 alloy enable a record‐low programming energy, down to a few tens of femtojoule. The new PCM/fabrication is fully compatible with the current 3D integration technology, adding no expenses or difficulty in processing.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Designing Conductive‐Bridge Phase‐Change Memory to Enable Ultralow Programming Power

Yang

Wang

et al. 2022

Advanced Science

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“…Alloying is typically needed to enhance the amorphous stability to improve the data retention temperatures. [14][15][16][17][18][19][20][21] By contrast, the lighter homologue Ge-As-Te alloys show much better amorphous stability. [22] The presence of arsenic alters the fragility of the ternary alloys and improves their glass formation ability drastically.…”

Section: Introductionmentioning

confidence: 99%

“…Alloying is typically needed to enhance the amorphous stability to improve the data retention temperatures. [ 14–21 ]…”

Section: Introductionmentioning

confidence: 99%

Bonding Nature and Optical Properties of As₂Te₃ Phase‐Change Material

Sun

Zhu

Zhang

2022

Physica Rapid Research Ltrs

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Chalcogenide phase‐change materials (PCMs) are a promising candidate for advanced memory and computing technologies. PCM‐based random access memories have entered the global memory market as storage‐class memory. In these products, the element arsenic plays an essential role in the selector layers, but how arsenic stabilizes the thermal stability of the chalcogenide glass remains elusive. Herein, thorough ab initio simulations are carried out to understand the chemical bonding, electronic structure, and optical properties of an important arsenic alloy As2Te3 in both crystalline and amorphous forms. In comparison with the homologue alloy Sb2Te3, the importance of homopolar bonds in stabilizing the amorphous phase of As2Te3 is revealed. Also, a strategy for the design of As x Sb2−x Te3 alloys with optimal material properties for nonvolatile photonic phase‐change applications is proposed.

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“…Germanium chalcogenides, in particular, GeTe and GeTe-Sb 2 Te 3 pseudo-binary compounds (GST), especially Ge 2 Sb 2 Te 5 [36], are one of the most successful material families that could meet these challenging requirements simultaneously. Doping and alloying are frequently used to tailor the material properties for faster speed and/or better retention temperature, targeting different application scenarios [37][38][39][40][41][42][43][44].…”

Section: Introductionmentioning

confidence: 99%

Tailoring the Structural and Optical Properties of Germanium Telluride Phase-Change Materials by Indium Incorporation

et al. 2021

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Chalcogenide phase-change materials (PCMs) based random access memory (PCRAM) enter the global memory market as storage-class memory (SCM), holding great promise for future neuro-inspired computing and non-volatile photonic applications. The thermal stability of the amorphous phase of PCMs is a demanding property requiring further improvement. In this work, we focus on indium, an alloying ingredient extensively exploited in PCMs. Starting from the prototype GeTe alloy, we incorporated indium to form three typical compositions along the InTe-GeTe tie line: InGe3Te4, InGeTe2 and In3GeTe4. The evolution of structural details, and the optical properties of the three In-Ge-Te alloys in amorphous and crystalline form, was thoroughly analyzed via ab initio calculations. This study proposes a chemical composition possessing both improved thermal stability and sizable optical contrast for PCM-based non-volatile photonic applications.

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Multi-level phase-change memory with ultralow power consumption and resistance drift

Cited by 57 publications

References 43 publications

Designing Conductive‐Bridge Phase‐Change Memory to Enable Ultralow Programming Power

Designing Conductive‐Bridge Phase‐Change Memory to Enable Ultralow Programming Power

Bonding Nature and Optical Properties of As₂Te₃ Phase‐Change Material

Tailoring the Structural and Optical Properties of Germanium Telluride Phase-Change Materials by Indium Incorporation

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Multi-level phase-change memory with ultralow power consumption and resistance drift

Cited by 57 publications

References 43 publications

Designing Conductive‐Bridge Phase‐Change Memory to Enable Ultralow Programming Power

Designing Conductive‐Bridge Phase‐Change Memory to Enable Ultralow Programming Power

Bonding Nature and Optical Properties of As2Te3 Phase‐Change Material

Tailoring the Structural and Optical Properties of Germanium Telluride Phase-Change Materials by Indium Incorporation

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Product

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Bonding Nature and Optical Properties of As₂Te₃ Phase‐Change Material