Multi-mode growth in Cu/Si(111) system: Magic nanoclustering, layer-by-layer epitaxy and nanowire formation

Зотов, А. В.; Грузнев, Д. В.; Utas, O.A.; Kotlyar, V.G.; Саранин, А. А.

doi:10.1016/j.susc.2007.10.032

Cited by 30 publications

(26 citation statements)

References 43 publications

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“…Initial 5.55 Â 5.55-Cu surface reconstruction was prepared by adsorption of about 2 ML of Cu on the atomically clean Si(1 1 1) substrate at room temperature followed by direct-current heating to about 550°C. STM measurements revealed total compliance of the resulting 5.55 Â 5.55-Cu surface as previously reported [8,9]. High purity 0039-6028/$ -see front matter Ó 2009 Elsevier B.V. All rights reserved.…”

Section: Methodssupporting

confidence: 79%

“…Thus, Au film grown on the Cu-modified 5.55 Â 5.55 surface at RT is much more uniform in thickness compared to that grown on the bare Si(1 1 1)7 Â 7 surface. We attribute the improvement of surface morphology to the absence of segregative Au 3 Si silicide, the formation of which is blocked by the presence of the 5.55 Â 5.55-Cu reconstruction between Au film and Si substrate (recall that the 5.55 Â 5.55-Cu reconstruction is actually a Cu 2 Si monolayer incorporating $1.7 ML of Cu [8,9]). However, the difference in the interfacial reconstructions, while leading to different film morphologies, does not affect their crystallinity.…”

Section: Resultsmentioning

confidence: 99%

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Growth of Au thin film on Cu-modified Si(111) surface

et al. 2009

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Section: Methodssupporting

confidence: 79%

Section: Resultsmentioning

confidence: 99%

Growth of Au thin film on Cu-modified Si(111) surface

et al. 2009

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“…However, the deposits were single-stoichiometry, and only Si (100) substrates were used in these two investigations. Several works on growth of Cu x Si 1−x films [14][15][16][17][18] have been taken on H-terminated Si (001) and Si (111). There were two or more possible Cu nucleation on Si surface, resulting compositions were highly complex, 19 and the researchers suggested there was a high reaction activity between copper and silicon.…”

Section: Introductionmentioning

confidence: 99%

Fabrication and characterization of CuxSi1−x films on Si (111) and Si (100) by pulsed laser deposition

Zhang

et al. 2016

AIP Advances

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The CuxSi1−x thin films have been successfully fabricated by pulsed laser deposition (PLD). The influences of laser energy fluency (I0) and deposition temperature (Td) on the phase structure were investigated. The results show that Cu deposited on Si (001) at I0 = 0.5-2.0 J/cm2, and η”-Cu3Si formed on Si (111) at I0 = 1.0-2.0 J/cm2. The films were consisted of Cu, η’-Cu3Si, ε-Cu15Si4 and δ-Cu0.83Si0.17 at Td = 100-500 °C on Si (001). The films were the single phase of η-Cu3Si at Td = 700 °C. In the case of Si (111), the phase structures transformed from Cu to Cu + η’-Cu3Si to η’-Cu3Si to η’-Cu3Si + η-Cu3Si with the increasing of Td. Rectangular grains were formed on Si (001), whereas triangular grains on Si (111). Cu (001) film was epitaxially grown on Si (001) at I0 = 1.5 J/cm2 and Td = 20 °C. η-Cu3Si (001) epitaxial layer was formed on Si (111) at I0 = 1.5 J/cm2 and Td = 700 °C. The epitaxial relationships of Cu (001)[100]//Si (001)[110] and η-Cu3Si (001)[-110]//Si (111)[11-2] were identified.

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“…Investigation of the conditions of the formation, ordering, and sta bility of nanostructures in the "semiconductor sub strate-metal silicide island" system is important for microelectronics [3][4][5][6]. Transition metal silicides are used as ohmic contacts and shutter materials [7,8].…”

Section: Introductionmentioning

confidence: 99%