Multi-objective optimization of gate driver circuit for GaN HEMT in electric vehicles

Moradpour, Milad; Lai, Andrea; Serpi, Alessandro; Gatto, Gianluca

doi:10.1109/iecon.2017.8216224

Cited by 7 publications

(6 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This benefit is due to the values and the size of the passive components (inductors, input and output capacitors) in the DC/DC converter varying inversely with the switching frequency [50]. The ability to remove the freewheeling diodes in converters is among the advantages of GaN in these components [70].…”

Section: Electrified Powertrainsmentioning

confidence: 99%

Current Status and Future Trends of GaN HEMTs in Electrified Transportation

et al. 2020

View full text Add to dashboard Cite

Gallium Nitride High Electron Mobility Transistors (GaN HEMTs) enable higher efficiency, higher power density, and smaller passive components resulting in lighter, smaller and more efficient electrical systems as opposed to conventional Silicon (Si) based devices. This paper investigates the detailed benefits of using GaN devices in transportation electrification applications. The material properties of GaN including the applications of GaN HEMTs at different switch ratings are presented. The challenges currently facing the transportation industry are introduced and possible solutions are presented. A detailed review of the use of GaN in the Electric Vehicle (EV) powertrain is discussed. The implementation of GaN devices in aircraft, ships, rail vehicles and heavy-duty vehicles is briefly covered. Future trends of GaN devices in terms of cost, voltage level, gate driver design, thermal management and packaging are investigated.INDEX TERMS Electric vehicle, gallium nitride, high electron mobility transistor, hybrid electric vehicle, wide bandgap devices.

show abstract

Section: Electrified Powertrainsmentioning

confidence: 99%

Current Status and Future Trends of GaN HEMTs in Electrified Transportation

et al. 2020

View full text Add to dashboard Cite

show abstract

“…In [22], the idea is the parameterization of both the high side (HS) and low side (LS) gate resistors (R G−HS and R G−LS ) in a GaN-based one leg inverter by solving a multi-objective optimization problem. The objective functions are the efficiency and the EMI level of the circuit.…”

Section: Introductionmentioning

confidence: 99%

“…The methodology is numeric where the amount of the objective functions are obtained on the base of the OrCAD PSpice simulations for 5 × 5 = 25 tests with different values of R G−HS and R G−LS : five values for each resistor where the objective functions are η = f 1 (R G−HS , R G−LS ) and EMI = f 2 (R G−HS , R G−LS ). Unlike [21], in [22] the mathematical expression of the objective functions is obtained by the use of a regression method. Then, solving a multi-objective optimization problem, the "Pareto front" of the problem is obtained.…”

Section: Introductionmentioning

confidence: 99%

“…In this paper the idea is the same as that of [22], however, the half-bridge configuration is more completed where there are four gate resistors to be studied instead of two: turn-ON HS gate resistor (R G−HS−ON ), turn-OFF HS gate resistor (R G−HS−OFF ), turn-ON LS gate resistor (R G−LS−ON ), and turn-OFF LS gate resistor (R G−LS−OFF ). Moreover, the power electronic converter is a SiC-based half-bridge DC-DC converter for the application of electric vehicles (EVs).…”

Section: Introductionmentioning

confidence: 99%

“…Moreover, the power electronic converter is a SiC-based half-bridge DC-DC converter for the application of electric vehicles (EVs). Unlike [22], where the evaluation of the proposed method is only on the base of the OrCAD PSpice simulations, here, the proposed method is evaluated by performing the experimental tests. In addition, in this paper, the half-bridge configuration is analyzed by addressing Miller effect crosstalk, which is a hot topic for the WBG devices such as SiC, as it is explained later in this section.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Multi-Objective Optimization of the Gate Driver Parameters in a SiC-Based DC-DC Converter for Electric Vehicles

et al. 2020

Self Cite

View full text Add to dashboard Cite

DC-DC converters are being used for power management and battery charging in electric vehicles (EVs). To further the role of EVs in the market, more efficient power electronic converters are needed. Wide band gap (WBG) devices such as silicon carbide (SiC) provide higher frequency and lower power loss, however, their high di/dt and dv/dt transients result in higher electromagnetic interference (EMI). On the other hand, some gate driver parameters such as gate resistor () have a contradictory effect on efficiency () and EMI. The idea of this paper is to investigate the values of these parameters using a multi-objective optimization method to optimize and EMI at the same time. To this aim, first, the effect of high and low side on and EMI in the half-bridge configuration is studied. Then, the objective functions of the optimization problem are obtained using a numerical regression method on the basis of the experimental tests. Then, the values of the gate resistors are obtained by solving the multi-objective optimization problem. Finally, and EMI of the converter in the optimum gate resistor design are compared to those in the conventional design to validate the effectiveness of the proposed design approach.

show abstract

Characterization and analysis of low-noise GaN-HEMT based inverter circuits

Paul

Sarkar

2019

Microsyst Technol

View full text Add to dashboard Cite

Multi-objective optimization of gate driver circuit for GaN HEMT in electric vehicles

Cited by 7 publications

References 18 publications

Current Status and Future Trends of GaN HEMTs in Electrified Transportation

Current Status and Future Trends of GaN HEMTs in Electrified Transportation

Multi-Objective Optimization of the Gate Driver Parameters in a SiC-Based DC-DC Converter for Electric Vehicles

Characterization and analysis of low-noise GaN-HEMT based inverter circuits

Contact Info

Product

Resources

About