Multi‐Operating Mode Field‐Effect Transistors Based on SnO/SnS Heterostructures and CMOS‐Like Inverter Applications

Abstract

A novel SnO/SnS heterojunction grown by pulsed laser deposition for the fabrication of high‐performance transistors with changeable polarity is described in this study. It is worth noting that the operating mode of a vertical heterojunction transistor can be switched from p‐type to ambipolar to n‐type by growing SnS with a different thickness on SnO with ambipolarity. The p‐type mobility could reach 1.77 cm2 V−1 s−1 and the switching ratio could reach 1517. The ambipolar transistor shows a V‐type transfer curve with electron channel mobility and hole mobility, respectively. The cross‐sectional transmission electron microscopy of the heterojunction interface reveals a high level of quality, which explains the method by which the working mode of the heterojunction changes. In addition, complementary metal‐oxide‐semiconductor (CMOS) inverters are successfully used with p‐type SnO transistors, n‐type SnO/SnS transistors, and ambipolar transistors. This work proposes a novel approach to preparing CMOS electrical components, as well as a new working mode for transistors, that are both simple and efficient.

A Reconfigurable All-Optical-Controlled Synaptic Device for Neuromorphic Computing Applications

“…When SnO is used as a barrier layer, the barrier overcome by hole injection is reduced, resulting in an increase in injection efficiency. Moreover, according to the conclusions in our previous work, the continuously grown SnO/SnS heterojunction has good interface quality and is also conducive to hole transport. In addition, optoelectronic synaptic devices based on IGZO/SnS heterojunction were prepared and also showed similar IPSC and EPSC.…”

Recent progress on ambipolar 2D semiconductors in emergent reconfigurable electronics and optoelectronics

“…[168] They have been employed in the construction of high-performance electronic and optoelectronic devices, such as ReSe 2 /MoS 2 van der Waals heterostructures, which exhibit ultra-fast and linear polarization-sensitive photodetectors, [169] vertical MoS 2 /WS 2 heterostructure with ambipolarity behavior, [170] vertical graphene/WS 2 /graphene van der Waals heterostructure with a low off-state current and a high ON/OFF ratio, exhibiting both n-type and bipolartype conduction, [171] ReSe 2 /PtSe 2 heterojunction for highperformance photodetectors, [172] WSe 2 /InSe heterostructure photodetector with ambipolar photoresponsivity, [173] and ambipolar SnO/SnS heterojunction transistors employed to build CMOS inverters. [174] Such investigations indicate that vertical heterostructures hold great potential for use in reconfigurable devices towards high-performance integrated circuits and systems.…”