Multi-polar resistance switching and memory effect in copper phthalocyanine junctions

Qiao, Shan; Kang, Shishou; Qin, Yu-Feng; Li, Qiang; Zhong, Hai; Kang, Yun; Yu, Shu-Yun; Han, Guangbing; Shen, Yan; Mei, Liangmo

doi:10.1088/1674-1056/23/5/058501

Cited by 2 publications

(1 citation statement)

References 41 publications

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“…[11] A new phenomenon observed in Schottky junction is the bipolar resistance effect (BRE), [12] which has drawn much attention due to its potential application in non-volatile memory. [13,14] Laser-induced carriers which diffuse at the same or opposite direction can be applied to the field-driven drift electrons to generate bipolar resistance effect, which is attributed to the difference in scattering probability between equilibrium and non-equilibrium carriers. [12] This theory seems suitable for many Schottky junction systems.…”

Section: Introductionmentioning

confidence: 99%

Lateral resistance reduction induced by light-controlled leak current in silicon-based Schottky junction

et al. 2015

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Lateral resistance of silicon-based p-type and n-type Schottky junctions is investigated. After one electrode on a metallic film is irradiated, the differential lateral resistance of the system is dependent on the direction of the bias current: it keeps constant in one direction and decreases in the opposite direction. By systematically investigating the electrical potential changes in silicon and the junction, we propose a new mechanism based on light-controlled leak current. Our work provides an insight into the nature of this phenomenon and will facilitate the advanced design of switchable devices.

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Section: Introductionmentioning

confidence: 99%

Lateral resistance reduction induced by light-controlled leak current in silicon-based Schottky junction

et al. 2015

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Fluorescence resonance energy transfer between CdTe quantum dots and copper phthalocyanine

He¹,

Li²,

Li³

et al. 2015

Acta Phys. Sin.

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The fluorescence resonance energy transfer in CdTe quantum dots (QDs)-copper phthalocyanine (CuPc) is investigated by ultrafast time-resolved spectroscopy technique equipped with femtosecond laser (780 nm, 76 MHz, 130 fs). The results show that the fluorescence lifetime of CdTe QDs decreases with the increase of CuPc concentration, and the energy transfer efficiency is found to increase with the increase of CuPc concentration. Moreover, the influence of the laser excitation power on the energy transfer efficiency is also studied. It is found that transfer efficiency decreases as excitation laser power increases, the physical mechanism is the thermal activation in the high power and the excited state transitions of high order induced by two-photon. The energy transfer efficiency can reach 43.8%, when the laser power is 200 mW, via two-photon excitation. This study indicates that the CdTe QDs-CuPc composite system has high potential as the third generation of photosensitizers.

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Multi-polar resistance switching and memory effect in copper phthalocyanine junctions

Cited by 2 publications

References 41 publications

Lateral resistance reduction induced by light-controlled leak current in silicon-based Schottky junction

Lateral resistance reduction induced by light-controlled leak current in silicon-based Schottky junction

Fluorescence resonance energy transfer between CdTe quantum dots and copper phthalocyanine

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