Multi-response optimization of ultrathin poly-SiGe films characteristics for Nano-ElectroMechanical Systems (NEMS) using the grey-Taguchi technique

Functional networks models for rapid characterization of thin films: An application to ultrathin polycrystalline silicon germanium films

“…The four process parameters were selected because they significantly influence the film characteristics more than others as discussed in Ref. [18]. In these parametric studies, only one deposition parameter was varied at a time while other parameters were kept constant.…”

Studies on the Residual Stress and Strain Gradients in Poly-SiGe Nanocantilevers

“…Strain gradients are computed from the tip deflections and lengths of free-standing cantilevers which are fabricated by lithography (Asafa et al, 2013, Asafa et al, 2014. However, this method requires a lot of time since several processing steps are required coupled with complexity in deflection measurement.…”

“…Two recipes -A and B -of poly-SiGe films were used for stress evolution study. These recipes were selected by the grey-Taguchi optimization technique as reported elsewhere (Asafa et al, 2013). The deposition conditions used are presented in Table 1.…”

“…The fundamental requirements for excellent poly-SiGe M/NEMS structural layers, such as low tensile stress, low stress gradient and low sheet resistance are achievable by effectively identifying the process regime most suitable for the deposition of these films. To achieve low strain gradient and low temperature deposition, the process variables can be optimized to deliver a simultaneous optimal response of all the desired film properties (Asafa et al, 2013).…”

“…obtained from SEM and AFM images, respectively (Asafa et al, 2013). The strain gradient Г was calculated from Equation (1).…”