Multi section bandgap tuned superluminescent diodes fabricated by UV laser induced quantum well intermixing

Abstract

Superluminescent diodes are used in numerous sensing and testing applications. To achieve the wide emission spectrum and high power required from such devices, we studied an innovative design constituting in several different bandgap energy sections independently electrically pumped. Bandgap modification was obtained by the UV laser quantum well intermixing process.

Bandgap Engineering of Quantum Semiconductor Microstructures

“…The presence of impurities, vacancies, and point defects lead to reduced threshold temperatures required for QWI. Since such defects could be intentionally introduced in selected areas of QW wafers, this approach has been extensively studied for the fabrication of multibandgap QW wafers (Marsh 1993), driven by the interest in fabrication of monolithically integrated photonic circuits and optoelectronic devices (Heidrich 2003;Skogen et al 2005;Nah and Likamwa 2006;Dubowski et al 1997Dubowski et al , 1999Dubowski et al , 2000Dubowski et al , 2002Dubowski et al , 2004, cold laser mirrors (Marsh 2007), superluminescent diodes (Beal et al 2011(Beal et al , 2013(Beal et al , 2015, formation of QW wires (Hirayama et al 1988), and tuning emission wavelength of epitaxial QDs (Malik et al 1997).…”