Multi-Step Simulations of Ionized Metal Physical Vapor Deposition to Enhance the Plasma Formation Uniformity

Abstract

Ionized metal physical vapor deposition (IMPVD), which is operated at a very low pressure to take advantage of the metal sputtering effect on the target surface, has unique properties compared with conventional DC magnetron sputtering. In this study, we investigated the effect of the rotating magnetic field on the plasma formation of IMPVD to enhance the deposition uniformity. This was accomplished through a multi-step simulation, which enabled plasma analysis, sputtered particle and chemical reaction analysis, and deposition profile analysis. A two-dimensional particle-in-cell Monte Carlo simulation utilizes the exact cross-section data of the Cu ion collisions and calculates the particle trajectories under specific magnetic field profiles. This new methodology gives guidance for the design of the magnetic field profiles of IMPVD and an understanding of the physical mechanism.