2005
DOI: 10.1088/0957-4484/16/8/037
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Multi-valued analogue information storage using self-assembled nanoparticle films

Abstract: Digital computers use binary states, typically represented by 0 and 5 V, to store and process information at all stages of a calculation. If more states (ideally a continuum) were available in between, density of information could be dramatically increased. Here we show that self-assembled nanoparticle films can feature such continuous state or analogue information storage. Information provided by an arbitrary gate voltage is ‘written’ by trapping charges in local, gate-modified potentials when films are coole… Show more

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Cited by 15 publications
(18 citation statements)
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“…Owing to the sublinear behavior, room temperature Coulomb blockade is observed even though the V T (0) is only 1.45 V. 95 subsequently reading the information by the resultant shift in threshold voltage. 103 A network of nanoparticle necklaces was shown to exhibit switching by a living microorganism, that is, biogating, at room temperature. 95 Methanotrophic cells were seeded onto the array and subsequently exposed to methanol vapor.…”
Section: Application Of Nanoparticle Arraymentioning
confidence: 99%
“…Owing to the sublinear behavior, room temperature Coulomb blockade is observed even though the V T (0) is only 1.45 V. 95 subsequently reading the information by the resultant shift in threshold voltage. 103 A network of nanoparticle necklaces was shown to exhibit switching by a living microorganism, that is, biogating, at room temperature. 95 Methanotrophic cells were seeded onto the array and subsequently exposed to methanol vapor.…”
Section: Application Of Nanoparticle Arraymentioning
confidence: 99%
“…On the other hand, in recent nanoparticle research, various applications based on the ability to accumulate charge as spherical capacitors 1,2) were also found. In several papers, memory or singleelectron devices 3,4) have been reported.…”
Section: Introductionmentioning
confidence: 99%
“…Floating nanodot (ND) gate memory (FNGM) devices based on metal-oxide-semiconductor (MOS) structure have been widely studied due to their superior characteristics, such as lower operation voltage, faster write/erase speed, longer retention and better endurance, compared to conventional flash memories. [1][2][3][4][5][6] The FNGM devices usually introduce semiconductor or metal nanodots in between the tunnelling and control oxide layers as charge storage elements. Compared to their semiconductor counterparts, metal nanodots have the advantages of higher density of state around the Fermi level, a wide range of available work functions, stronger coupling with the conduction channel and smaller energy perturbation, due to carrier confinement.…”
Section: Introductionmentioning
confidence: 99%