Multianalyte Mg-Doped InGaZnO Electrolyte-Insulator-Semiconductor Biosensors and Multiple Material Characterizations of Membrane Nanostructures

Effects of NH3 Plasma and Mg Doping on InGaZnO pH Sensing Membrane

“…Based on previous reports [ 23 , 35 , 36 , 37 ], Mg doping can generate Mg 2+ near the surface of the membrane and attract some OH − ions in the electrolyte solution. Therefore, the OH − in the diffusion layer of the electrolyte solution might decrease, and therefore the C DL (diffusion capacitance) might decrease as well.…”

“…In our experiment, InGaZnO and Mg targets were purchased from Gredmann Company, Taiwan. Then, in the condition, 50-nm InGaZnO was deposited on the wafer by radio frequency (RF) reactive sputtering with a mixture of Ar and O 2 (Ar:O 2 = 23:2) ambient during sputtering [ 23 ]. In the second condition, a 50-nm Mg-doped InGaZnO sensing membrane was deposited by co-sputtering on the wafer.…”

“…This study confirms that incorporation of Mg doping and NH3 plasma treatment can work together to optimize membrane material properties and sensing performance [ 21 , 22 ]. Furthermore, based our previous study [ 23 ], appropriate annealing could effective improve the material quality and sensing behaviors. In this study, different from the annealing treatment, compared with the as-deposited samples, NH3 plasma treatment could boost InGaZnO samples with or without Mg doping in terms of sensing capability more effectively.…”

Excellent physicochemical and sensing characteristics of a RexOy based pH sensor at low post-deposition annealing temperature

“…† The Na + , K + , Mg 2+ , and Ca 2+ sensitivities of both as-prepared and annealed samples were much lower than the H + ion sensitivities, probably due to the smaller dimension and lighter weight of the H + ion compared to Na + , K + , Mg 2+ , and Ca 2+ ions. 39 Therefore, the Re x O y can be considered more selective to H + ions than the interferent ions. A comparative representation of the H + and interfering ion sensitivities is depicted in Table 2.…”

Comparison of Magnesium and Titanium Doping on Material Properties and pH Sensing Performance on Sb2O3 Membranes in Electrolyte-Insulator-Semiconductor Structure

“…However, EIS capacitors with Mg-doped or Ti-doped Sb 2 O 3 [27][28][29][30][31][32][33][34][35] as the membrane material have not been clearly reported yet. Since Mg has low electron affinity and low electronegativity, and the radius of Mg 2+ is similar to that of Sb 3+ , Mg can perfectly replace the lattice site of Sb [36][37][38][39][40][41][42][43]. In addition, many studies have also shown that Mg doping can increase the energy gap and reduce redundant oxygen vacancies.…”