Multicolor-emitting thin-film electroluminescent devices using Ga2O3 phosphors co-doped with Mn and Cr

Abstract

Articles you may be interested inPhotoluminescence and electroluminescence from Eu-activated Ca Al 2 O 4 -based multicomponent oxide thinfilm phosphorsHigh-luminance multicolor-emitting thin-film electroluminescent ͑TFEL͒ devices have been developed using a new Mn-and Cr-co-doped Ga 2 O 3 phosphor with variations of both Mn and Cr from 0 to a content of 20 at. %. Ga 2 O 3 :Mn,Cr TFEL devices driven at 1 kHz exhibited a change from green to red in emission color, maintaining luminances above 100 cd/m 2 , when the co-doped Cr content was varied from 0 to 20 at. % under a constant Mn content of 0.3 at. % doping. In addition, the emission color of a Ga 2 O 3 :Mn,Cr TFEL device co-doped with a Mn content of 0.3 at. % and a Cr content of 3 at. % changed from green to red with an increase of the applied voltage.

Review—RF Sputtered Films of Ga2O3

“…It exhibits remarkable thermal and chemical stability, high transparency in ultraviolet and visible regions, wide bandgap of 4.5-5.0 eV and high dielectric constant values from 10.2 to 14.2. [11][12][13][14] Owing to these distinguished properties, Ga 2 O 3 has captivated immense research interest for applications in solar cells, 15 transparent conducting oxides (TCOs), 16 phosphors, 17,18 metal oxide semiconductor field effect transistor (MOSFET) and Schottky barrier diodes (SBD) 19 and high temperature gas sensors. 20 Several techniques have already been employed to prepare gallium oxide thin films.…”

Characteristics of A.C Electroluminescence in ZnGa2O4:Mn2+ Thin film Devices

“…Various efficient oxide host materials investigated include ZnGa 2 O 4 3-7 Zn 2 SiO 4 , 8 Zn 2 Ge x Si 1-x O 4 , 9 Y 2 O 3 10 and Ga 2 O 3 . [11][12][13] Most of these works reports the deposition of the active layer on a 0.2 mm BaTiO 3 sheet and a subsequent EL emission on post deposition annealing in the range 700-1100 C. Lewis et al has reported the fabrication of Zn 2 GeO 4 :Mn 2þ active thin film EL (TFEL) devices on glass substrates through RTA treatments. 14 Red Ga 2 O 3 :Eu 3þ ACTFEL devices have also been realized on transparent glass substrates using pulsed laser deposition.…”