Multicolor Silicon Light-Emitting Diodes (SiLEDs)

Maier-Flaig, Florian; Rinck, Julia; Stephan, Moritz; Bocksrocker, Tobias; Bruns, Michael; Kübel, Christian; Powell, Annie K.; Ozin, Geoffrey A.; Lemmer, Uli

doi:10.1021/nl3038689

Cited by 283 publications

(241 citation statements)

References 28 publications

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“…Silicon nanocrystals (Si NCs) have been intensively investigated during past decades for their promising applications in various fields such as optoelectronics [1][2][3][4][5][6], photovoltaics [7][8][9][10][11], energy storage [12,13], and bioimaging [14,15]. This is mainly due to their nontoxicity, low cost, and compatibility with well-established Si-based microelectronic technology.…”

Section: Introductionmentioning

confidence: 99%

Density functional theory study on the B doping and B/P codoping of Si nanocrystals embedded in SiO2

Cottenier

et al. 2017

Phys. Rev. B

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Doping silicon nanocrystals (Si NCs) embedded in silicon dioxide (SiO 2 ) with boron (B) and phosphorus (P) is a promising way of tuning the properties of Si NCs. Here we take advantage of density functional theory to investigate the dependence of the structural and electronic properties of Si NCs embedded in SiO 2 on the doping of B and P. The locations and energy-level schemes are examined for singularly B-doped or B/P-codoped Si NCs embedded in SiO 2 with a perfect or defective Si/SiO 2 interface at which a Si dangling bond exists. A dangling bond plays an important role in the doping of Si NCs with B or B/P. The doping behavior of B in Si NCs embedded in SiO 2 vastly differs from that of P. The electronic structure of a B/P-codoped Si NC largely depends on the distribution of the dopants in the NC.

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Section: Introductionmentioning

confidence: 99%

Density functional theory study on the B doping and B/P codoping of Si nanocrystals embedded in SiO2

Cottenier

et al. 2017

Phys. Rev. B

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“…The nanocrystalline silicon (nc-Si) is extremely investigated, not only because of its various applications, but also because of the interest presented by new phenomena that takes place at nanometric scale. Among the new nanoscale [3][4][5][6] phenomena, a leading place belongs to the quantum confinement (QC) [3,4]. Quantum confinement in nano semiconductors (which occurs when electrons are strongly confined in one, two or three dimensions), is the basis behind research and development of low-dimensional semiconductor nanostructures [7].…”

Section: Introductionmentioning

confidence: 99%

“…In the case of the nanocrystalline silicon (nc-Si), quantum confinement is dominant in transport processes and has an important contribution in their electronic phenomena. Silicon nanocrystalline properties which are derived from this effect, are very sensitive to shape and size [3,5,6,8] distributions within the sample. It is therefore important to control this size with a maximum accuracy.…”

Section: Introductionmentioning

confidence: 99%

A Quantum Confinement Study of the Electronic Energy of some Nanocrystalline Silicon Quantum-Dots

Ekong

Osiele

2016

ILCPA

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ABSTRACT. We have employed a quantum confinement (QC) model to the study of different shapes of nanocrystalline silicon (nc-Si) quantum dot. Each dots (shapes), although within the limits of an effective diameter of 3nm, exhibits divergence leading to different electronic energy based on the transitions from the quantum selection rule. Also, the graphical representation of the energies from each shape as a function of the effective diameter gives a qualitatively similar spectrum of discrete energies. The results obtained in this work using QC model are in good agreement with experiment and other models in literature.

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“…Therefore, the ability to use silicon as the light-emitting diode material would potentially make optoelectronic device fabrication much easier, and is a focus of much silicon nanomaterial research. [10][11][12][13]44 Difficulties involved with integration of nanocrystalline Si into commercial devices arise in stabilizing the PL intensity and energy in aqueous or aerobic environments. 23,41,45 Changes in the PL of nanocrystalline Si over time, presumably alongside alterations in the surface chemistry or size of the particles, have been reported consistently across the literature.…”

Section: Technological Developments Leading To Photoluminescent Siliconmentioning

confidence: 99%

“…40,[43][44][45][46][47][48][49][50][51][52][53] For example, surface reconstructions, chemical impurities, lattice vacancies, dislocations, etc., can produce characteristic energy states (defect states)…”

Section: Effect Of Defects On Photoluminescence From Silicon Nanopartmentioning

confidence: 99%

Investigation into Effects of Instability and Reactivity of Hydride-Passivated Silicon Nanoparticles on Interband Photoluminescence

Radlinger¹

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While silicon has long been utilized for its electronic properties, its use as an optical material has largely been limited due to the poor efficiency of interband transitions. However, discovery of visible photoluminescence (PL) from nanocrystalline silicon in 1990 triggered many ensuing research efforts to optimize PL from nanocrystalline silicon for optical applications. Currently, use of photoluminescent silicon nanoparticles (Si NPs) is commercially limited by: 1) the instability of the energy and intensity of the PL, and 2) the low quantum yield of interband PL from Si NPs.Herein, red-emitting, hydrogen-passivated silicon nanoparticles (H-Si NPs) were synthesized by thermally-induced disproportionation of a HSiCl 3 -derived (HSiO 1.5 )n polymer. The H-Si NPs produced by this method were then subjected to various chemical and physical environments to assess the long-term stability of the optical properties as a function of changing surface composition. This dissertation is intended to elucidate correlations between the reported PL instability and the observed changes in the Si NP surface chemistry over time and as a function of environment.First, the stability of the H-Si NP surface at slightly elevated temperatures towards reactivity with a simple alkane was probed. The H-Si NPs were observed by FT-IR spectroscopy to undergo partial hydrosilylation upon heating in refluxing hexane, in addition to varying degrees of surface oxidation. The unexpected reactivity of the Si surface in n-hexane supports the unstable nature of the H-Si NP surface, and furthermore implicates the presence of highly-reactive Si radicals on the surfaces of the Si NPs. We propose that reaction of alkene impurities with the Si surface radicals is largely responsible for the observed surface alkylation. However, we also present an alternate ii mechanism by which Si surface radicals could react with alkanes to result in alkylation of the surface.Next, the energy and intensity stability of the interband PL from H-Si NPs in the presence of a radical trap was probed. Upon addition of (2,2,6,6,-tetramethyl-piperidin-1-yl)oxyl (TEMPO), the energy and intensity of the interband transition was observed to change over time, dependent on the reaction conditions. First, when the reaction occurred at 4ºC with minimal light exposure, the interband transition exhibited a gradual hypsochromic shift to between 595 nm and 655 nm, versus the λ max of the original low energy emission peak at 700 nm, depending on the amount of TEMPO in the sample.Second, when the reaction proceeded at room temperature with frequent exposure to 360 nm irradiation, the original interband transition at 660 nm was quenched while a new peak at 575 nm developed. Based on all the data collected and analyzed, we assign the 595 -655 nm transition as due to interband exciton recombination from Si NPs with reduced diameters relative to the original Si NPs. We furthermore assign the 575 nm transition as due to an oxide-related defect state resulting from rapid oxidation of pho...

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Multicolor Silicon Light-Emitting Diodes (SiLEDs)

Cited by 283 publications

References 28 publications

Density functional theory study on the B doping and B/P codoping of Si nanocrystals embedded in SiO2

Density functional theory study on the B doping and B/P codoping of Si nanocrystals embedded in SiO2

A Quantum Confinement Study of the Electronic Energy of some Nanocrystalline Silicon Quantum-Dots

Investigation into Effects of Instability and Reactivity of Hydride-Passivated Silicon Nanoparticles on Interband Photoluminescence

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