Org anic-inorganic halide perovskites have attracted considerable attention owing to their outstanding solar cell efficiency. Meanwhile, these halide perovskites exhibit good light emitting in visible and near-infrared range with high fluorescence quantum yield, resulting in electroluminescence. However, it remains challenging for lighting and display due to the low luminance and poor long-term stability. Herein, high performance green light-emitting diodes are fabricated from bromine based perovskite (CH3NH3PbBr3) by systematically adjusting the preparation conditions and optimizing the emitting layer thickness. A high luminance up to 1500 cd m −2 (one of the highest values for perovskites-based light-emitting diodes) was achieved with 80 nm perovskites-emitting layer, due to the well-crystallized, full-coverage property of the films. This result further confirms the great prospect of organic-inorganic perovskites in optoelectronics.Recently, organic-inorganic halide perov skites, a new class of semiconductors with high power conversion efficiency and long-range balanced hole-electron transport characteristics, have shown huge potential in photovoltaics [1−10]. However, the work principle of these perovskite materials has not been well elucidated except for a few reports [11−15]. Apart from charge mobility [16,17], optical properties clearly point out another way to investigate these materials, which show pieces of information including charge separation, bandgap and chemical purity [18]. Interestingly, these organic-inorganic materials based on perovskites really exhibit excellent photoluminescence properties with tunable visible and near-infrared spectru m [19−22]. Moreover, combined with their balanced ambipolar properties, these materials have been proven to be electrically light emission. Very recently, a breakthrough in light-emitting diodes (LEDs) based on organic-inorganic halide perovskites has been made, which proves organic-inorganic halide perovskites as promising candidates in LEDs [23]. The ever reported LEDs based on these halide perovskites which show electroluminescence in near-infrared, red and green region and a luminance of ~364 cd m −2 was achieved 1 B eijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China 2 University of Chinese Academy of Sciences, Beijing 100190, China * Corresponding authors (emails: dhl522@iccas.ac.cn (Dong H); huwp@iccas.ac.cn (Hu W)) when the thickness of the active layer was 20 nm. Lately, an improved luminance of 417 cd m −2 was obtained for multicolored perovskites-LEDs based on a 40 nm emitter layer, which is due to the reduced carrier injection barrier for efficient electroluminescence [24]. However, further application remains challenging owing to the toxicity of Pb atom, poor long-term stability and low luminance. Thus, improving the luminance, which is the focus of this paper, emerges as an important and urgent aspect to make these LEDs commercialized.Acco...