2001
DOI: 10.1002/1521-4095(200112)13:23<1815::aid-adma1815>3.0.co;2-t
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Multicrystalline Silicon for Solar Cells: Process Development by Numerical Simulation

Abstract: Continuously improving crystallization conditions and solar cell processes have lead to steadily increasing efficiencies of solar cells based on multicrystalline silicon. There is, however, still an efficiency gap between mono‐ and multicrystalline silicon amounting to 1–2 % (absolute) depending on the cell process used. Topographies of the local solar cell performance clearly reveal that the main contribution to this efficiency gap is due to recombination‐active dislocations present in multicrystalline silico… Show more

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Cited by 22 publications
(11 citation statements)
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“…Our conclusions, therefore, do not rely on impurity analysis or estimated segregation coeffi cients. By comparison, the previous then, and the increased use of directionally solidifi ed, multicrystalline ingots [ 3 ] instead of single-crystalline ingots, there is a need for updated and more-detailed studies.…”
Section: Comparisons Of the Westinghouse Model/study With This Model/mentioning
confidence: 99%
“…Our conclusions, therefore, do not rely on impurity analysis or estimated segregation coeffi cients. By comparison, the previous then, and the increased use of directionally solidifi ed, multicrystalline ingots [ 3 ] instead of single-crystalline ingots, there is a need for updated and more-detailed studies.…”
Section: Comparisons Of the Westinghouse Model/study With This Model/mentioning
confidence: 99%
“…As the direction of maximum shear stress is oriented 45°relative to the principal stresses, 96 it is not surprising that dislocation bands often appear to form diagonal or cross-hatched patterns, along the slip plane most closely aligned to 45°relative to the growth direction. 31,97 Although 3D stress fields within ingots are more complex, 91,92 a similar relationship between principal stress direction and dislocation band formation is expected.…”
Section: B Dislocationsmentioning
confidence: 97%
“…Dislocations, one-dimensional line defects 89 present in mc-Si ribbons 23,90 and ingots, 91,92 can form to relieve thermal stresses during crystal growth. Previous studies imaged and modeled the birefringence associated with screw, 37 edge, 38 and mixed [28][29][30][31][32][33][34] dislocations in other cubic crystalline solids, both as single dislocations and in bands.…”
Section: B Dislocationsmentioning
confidence: 99%
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“…Because module efficiency is governed in part by wafer quality, industry efforts are focused on reducing wafer defect density, while retaining low cost-per-area [3]. In particular, much attention is focused on reducing the density of dislocations, i.e., 1-D extended defects, which are among the most detrimental defects in ingot-based multicrystalline silicon (mc-Si) [4]- [6].…”
Section: Introductionmentioning
confidence: 99%