We regret to inform our readers that Dr. Wolfhard Beyer has passed away during the review process of this publication.
IntroductionHydrogenated amorphous silicon (a-Si:H) films are widely used and are of interest for various technologies like thin film solar cells, [1][2][3] silicon heterojunction solar cells, [4][5][6] thin film silicon solar cells on glass, [7][8][9] as well as transistors in large area displays. [10] Hydrogen plays a crucial role in these devices as it passivates silicon defects. Of particular, importance can be the motion of hydrogen during deposition at elevated temperatures and upon heat treatment. In recent time, interest has increased in details and mechanisms of a-Si:H film disintegration and peeling. [8,[11][12][13] These latter effects are known to occur mostly during annealing, in particular involving rapid heating. Related to such disintegration effects may be bubble and pinhole formation due to accumulation of H at interfaces. [14][15][16] The detachment of H containing silicon alloys and layer stacks upon thermal treatment is crucially problematic for the previously mentioned applications. Hence, it is important to understand the mechanisms of hydrogen motion to avoid the destruction of the films.In this article, we study by SIMS depth profiling the disintegration of deuterated and hydrogenated (a-Si:D/a-Si:H) layer structures after annealing by using a continuous wave (CW)