2019
DOI: 10.1016/j.apsusc.2019.03.163
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Multidimensional graphene and ZnO-based heterostructure for flexible transparent ultraviolet photodetector

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Cited by 38 publications
(26 citation statements)
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“…As compared to most of the previous study, the transparent and exible UV photodetectors which are prepared by using ZnO thin lms annealed by using TDA method show the best performances in terms of fastest rise/decay times at lowest bias voltage. Ko et al reported the highest value of dark current and photocurrent for their UV photodetectors, but they 38 But, in general, the value of dark current and photocurrent is affected to the value of bias voltage and it means that accurate comparison of the UV photodetector performance is impossible at different bias voltage. Thus, we compared the rise and decay time constant of UV photodetector, which is not affected to the bias voltage.…”
Section: Resultsmentioning
confidence: 99%
“…As compared to most of the previous study, the transparent and exible UV photodetectors which are prepared by using ZnO thin lms annealed by using TDA method show the best performances in terms of fastest rise/decay times at lowest bias voltage. Ko et al reported the highest value of dark current and photocurrent for their UV photodetectors, but they 38 But, in general, the value of dark current and photocurrent is affected to the value of bias voltage and it means that accurate comparison of the UV photodetector performance is impossible at different bias voltage. Thus, we compared the rise and decay time constant of UV photodetector, which is not affected to the bias voltage.…”
Section: Resultsmentioning
confidence: 99%
“…4,29,30 It should be noted that better device performance has been observed in nanohybrid UV detectors by optimal device design to take advantages of high carrier mobility of graphene, while scaling up the nanohybrid detectors remains challenging. 1,4345 This means that further improvement of nanocomposite UV detectors is possible through implementing nanohybrid device designs.…”
Section: Resultsmentioning
confidence: 99%
“…The responsivity and detectivity of the device are seen to be higher than the exiting graphene/ZnO-based devices as well as other ZnO-based p-n, MSM and Schottky junctions. The device is expected to exhibit similar responses even when it is bent [37,38]. It is clear from the results that the fabricated device outperforms the existing devices and thereby becomes a potential competitor for the existing flexible detectors that are expected to dominate the future's Si photonic and optoelectronic market.…”
Section: Uv Detectionmentioning
confidence: 92%