Multiemitter 638-nm high-power broad area laser diodes for display application

Nishida, Takehiro; Kuramoto, K.; Iwai, Yuji; Fujita, T.; Yagi, T.

doi:10.1117/1.oe.58.8.086113

Cited by 5 publications

(1 citation statement)

References 13 publications

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“…Output power (LI) and PCE curves for 45 µm wide cavity single emitter chips of each design tested under CW operation are plotted in Figure 10. The optimization design reaches peak PCE of 45%, which is higher than some of the best commercially available red laser diodes [18]. Further optimization to facet coating reflectivity may yield additional increases to PCE.…”

Section: Laser Diode Structuresmentioning

confidence: 87%

High-Power, High-Efficiency Red Laser Diode Structures Grown on GaAs and GaAsP Metamorphic Superlattices

et al. 2022

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Three types of GaAsP metamorphic buffer layers, including linearly graded, step graded, and metamorphic superlattices, were compared for the purposes of virtual substrates for red laser diode heterostructures. Laser diodes were fabricated on GaAs substrates and relaxed GaAsP metamorphic superlattice virtual substrates. A laser diode structure with a tensile-strained quantum well on a standard miscut GaAs substrate achieved TM-polarized emission at a 638 nm wavelength with 45% peak power conversion efficiency (PCE) at a 880 mW continuous wave (CW) output power with T0 = 77 K and T1 = 266 K. An analogous laser diode structure with a compressively strained quantum well on the metamorphic superlattice emitted TE-polarized 639 nm light with 35.5% peak PCE at 880 mW CW with T0 = 90 K and T1 = 300 K.

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Section: Laser Diode Structuresmentioning

confidence: 87%

High-Power, High-Efficiency Red Laser Diode Structures Grown on GaAs and GaAsP Metamorphic Superlattices

et al. 2022

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Beam spot quality detection of 650 nm laser diode using lightweight transformer model

Shi,

Sun,

Tang

et al. 2024

Measurement

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Equal-intensity beam splitter fabricated by segmented half-wave plate for passive laser speckle reduction

Tong

Yuxiang

et al. 2021

Opt. Lett.

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An equal-intensity beam splitter (EIBS) for passive laser speckle reduction is reported. The EIBS consists of a segmented half-wave plate (SHWP) with the designed orientation of the fast axis of each segment, a polarization beam splitter, and a mirror. The SHWP is fabricated using patterned photoalignment material and liquid crystal polymer. Ten laser sub-beams are generated by the twenty-one-pixelated EIBS, where the largest intensity ratio among them is 7.6. Laser temporal and spatial coherences are destroyed because of the optical path delays among the laser sub-beams. The EIBS is used to reduce laser speckle passively, and objective speckle contrast is reduced from 0.82 to 0.33 when all 10 laser sub-beams are used.

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Multiemitter 638-nm high-power broad area laser diodes for display application

Cited by 5 publications

References 13 publications

High-Power, High-Efficiency Red Laser Diode Structures Grown on GaAs and GaAsP Metamorphic Superlattices

High-Power, High-Efficiency Red Laser Diode Structures Grown on GaAs and GaAsP Metamorphic Superlattices

Beam spot quality detection of 650 nm laser diode using lightweight transformer model

Equal-intensity beam splitter fabricated by segmented half-wave plate for passive laser speckle reduction

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