Multiferroic Operation of Dynamic Memory Based on Heterostructured Cantilevers

Abstract

Multiferroic heterostructures consisting of Pb(Zr0·52Ti0·48)O3 and Fe0.7Ga0.3 thin films are integrated on microfabricated Si cantilevers, and they are operated in a non-linear regime. Enhanced mechanical coupling at the multiferroic interface and tunability of the resonant frequency are used to devise bistable dynamic states that can be reversibly switched by both DC magnetic and electric fields.

Magneto-electric interactions at bending resonance in an asymmetric multiferroic composite: Theory and experiment on the influence of electrode position

“…[1][2][3][4] Layered composites with thin films, thick films, or single crystals of ferrites, transition/rare-earth metals or alloys for the piezomagnetic phase and lead zirconate titanate (PZT), lead magnesium niobate-lead titanate, barium titanate, quartz, langatate, or aluminum nitride for the piezoelectric phases are reported to show very strong ME coupling. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16] Asymmetric bilayers in general show a smaller MEVC compared to symmetric trilayers due to flexural deformation in applied magnetic or electric fields. [1][2][3] But the MEVC in bilayers could be enhanced substantially when the excitation field is applied at the bending resonance frequency.…”

“…[1][2][3] But the MEVC in bilayers could be enhanced substantially when the excitation field is applied at the bending resonance frequency. [13][14][15][16][17][18] There have been many reports on ME coupling at bending resonance in bilayers of composites with specific focus on their utility for enhancing the sensitivity of magnetic sensors by frequency modulation. [4][5][6][7][8][9][10][11][12][13][14][15] The bending mode frequency is dependent on the dimensions of the composite, but are generally smaller than the frequency of electromechanical resonance (EMR).…”

“…[1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16] The magneto-electric (ME) effect is studied by subjecting the composite to a magnetic or an electric field. The sample response to magnetic fields, termed direct ME-effect, could be studied by applying a magnetic bias field H and an ac magnetic field (dH) and measuring the resulting electric field dE.…”

Towards electromechanical computation: An alternative approach to realize complex logic circuits

“…The switching between the states was performed by various means, such as the addition of a secondary squared wave signal to the AC driving signal, 1 modulation of the DC signal, 3 or change in the DC magnetic field. 9 Also, a logic-memory device 6 and a binary counter 7 were demonstrated utilizing feedback control to switch between the two vibrational states of nonlinearly resonating MEMS resonators. A mechanical random access memory device has been demonstrated based on the nonlinear vibration of a piezoelectrically active localized membrane resonator in a phonon circuit.…”

Magnetic field-induced ferroelectric domain structure evolution and magnetoelectric coupling for [110]-oriented PMN-PT/Terfenol-D multiferroic composites

“…Chen et al 19 prepared laminated composites consisting of Ni 43 Mn 41 Co 5 Sn 11 alloy and PMN-PT ferroelectric single crystal, and studied the electric field induced Hall resistivity and magnetization behaviors. As for all-thin-film ME heterostructures, Onuta et al 20,21 was able to obtain a maximum ME coefficient up to 30-50 V/cm·Oe for Fe 0.7 Ga 0.3 /Pb(Zr 0.5 Ti 0.48 )O 3 (500nm/600nm) on a silicon wafer buffered with oxide/nitride/oxide multilayers using a Pt/Ti (90-100nm/20nm) bilayer as the bottom electrode.…”