“…Because of room-temperature coupling between ferroelectric and magnetic order parameters, it brings forth a novel phenomenon known as magnetoelectric effect (ME), in which polarization can be tuned by magnetic field and vice versa. This coupling provides an additional opportunity for the design of magnetoelectric and spintronic devices [2][3][4]. Multiferroic materials have gained tremendous attention on account of their potential applications in various fields, such as bubble memory device, microwave, satellite communication, audio-video, digital recording [4,5], sensor, multiple state memory element, electro-ferromagnetic resonance device [6], thin film capacitor, non-volatile memory [7], optoelectronics, solar energy device [4], highdensity ferroelectric magnetic random access memory [8], and permanent magnet [9].…”