Multifrequency terahertz lasing from codoped silicon crystals

Pavlov, S.G.; Eichholz, René; Abrosimov, N. V.; Redlich, Britta; Hübers, H.-W.

doi:10.1063/1.3553769

Cited by 14 publications

(9 citation statements)

References 16 publications

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“…Effective-mass calculations of the wave functions have been shown to be useful in predicting that donor dynamics and experiments on P and As in silicon are consistent with single-phonon emission [4,15], though the established theoretical picture involves cascade relaxation via intermediate, very short-lived, dark states [10,18]. In this paper, we investigate, using time-domain spectroscopy with a free-electron laser, the orbital relaxation and dephasing in acceptors B, Al, and Ga, and the donor Sb.…”

Section: Introductionmentioning

confidence: 97%

“…Where free atoms have found application in quantum information [1,2], semiconductor impurities are being developed for atomic-scale spintronics and orbitronics [3][4][5][6][7][8], and alkalivapor-laser concepts [9] are used in semiconductor gain media [10,11]. The electrons bound to group-V donor atoms in Si occupy hydrogenlike wave functions, and many fundamental parameters such as their energy and Bohr radius can be predicted by simple rescaling of the electron mass and dielectric constant from their free-space values [6,12].…”

Section: Introductionmentioning

confidence: 99%

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Time-Resolved Dynamics of Shallow Acceptor Transitions in Silicon

et al. 2013

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Shallow group-V donors in silicon may be thought of as hydrogenlike, and shallow acceptors are similarly described by effective-mass theory with similar energy scales, which implies that donor and acceptor excitations should be just as long-lived. Yet, spectral widths of acceptors are considerably wider. We have measured the orbital dynamics of acceptors in silicon using time-domain spectroscopy with a free-electron laser. Both the population and coherence lifetimes for acceptors in natural silicon are substantially longer-e.g. approximately 60 ps for boron-than implied by the spectral linewidths; our experiments also establish the recombination time for ionized acceptors to be, at approximately 500 ps, nearly an order of magnitude longer. We show that there are no extra sources of decoherence introduced by the host crystal, other than the population relaxation. In this sense, the crystal acts as an atom trap, and, by introducing quantum coherent control of acceptors to that previously established for donors, we open the way to optically controllable nanoscale p-n devices.

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Section: Introductionmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

Time-Resolved Dynamics of Shallow Acceptor Transitions in Silicon

et al. 2013

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“…The sample has nearly equal numbers of each species so half of the nearest-neighbor pairs are heterodonor pairs, and in these pairs if one species of the donors is excited optically the other one will remain in the ground state. The same material has previously been used for realization of multifrequency terahertz lasing under optical pumping [14], and as expected for this concentration, no evidence of broadening of the absorption and emission lines due to pair complexes was seen. [12] are labeled according to the excited state (all originating from the 1s(A 1 ) ground state) for (a) antimony and (b) phosphorus (1-2p 0 , 2-2p ± , 3-3p 0 , 4-3p ± , 5-4p ± , 6-5p ± , and 7-conduction band).…”

Section: Distribution Of Pair Separationsmentioning

confidence: 94%

Photon assisted tunneling in pairs of silicon donors

et al. 2014

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Shallow donors in silicon are favorable candidates for the implementation of solid-state quantum computer architectures because of the promising combination of atomiclike coherence properties and scalability from the semiconductor manufacturing industry. Quantum processing schemes require (among other things) controlled information transfer for readout. Here we demonstrate controlled electron tunneling at 10 K from P to Sb impurities and vice versa with the assistance of resonant terahertz photons.

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“…1s(T 2 ) of P has been observed for pumping into the 3p AE state and into the conduction band. It should be noted that when the pump photon energy exceeds the ionization energy of the Sb donor, both emission lines occur in higher-doped samples [84]. In the case of excitation corresponding to pump energies below the 3p 0 state of Sb donors, Raman lasing occurs along with intracenter lasing on the 2p 0 !…”

Section: Monoisotopic 28mentioning

confidence: 99%

“…A slight antimony gradient along the growth axis allowed fabrication of samples with different ratios of N Sb /N P in the range of 0.8-1.2. The crystals used in these experiments had a total donor concentration of N P þ N Sb $ (2.5-4) Â 10 15 cm À3 , which is close to the optimum for THz silicon lasers [84]. Standard sample preparation and the experimental setup at the FEL IR-User Facility of the FOM Institute for Plasma Physics were used.…”

Section: Monoisotopic 28mentioning

confidence: 99%

The physical principles of terahertz silicon lasers based on intracenter transitions

Pavlov

Жукавин

Shastin

et al. 2012

Physica Status Solidi (b)

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The first silicon laser was reported in the year 2000. It is based on impurity transitions of the hydrogen-like phosphorus donor in monocrystalline silicon. Several lasers based on other group-V donors in silicon have been demonstrated since then. These lasers operate at low lattice temperatures under optical pumping by a midinfrared laser and emit light at discrete wavelengths in the range from 50 to 230 mm (between 1.2 and 6.9 THz). Dipole-allowed optical transitions between particular excited states of group-V substitutional donors are utilized for donortype terahertz (THz) silicon lasers. Population inversion is achieved due to specific electron-phonon interactions of the impurity atom. This results in long-living and short-living excited states of the donor centers. Another type of THz laser utilizes stimulated resonant Raman-type scattering of photons by a Raman-active intracenter electronic transition. By varying the pump-laser frequency, the frequency of the Raman intracenter silicon laser can be continuously changed between at least 4.5 and 6.4 THz. The gain of the donor and Ramantype THz silicon lasers is of the order of 0.5 to 10 cm À1 , which is similar to the net gain realized in THz quantum cascade lasers and infrared Raman silicon lasers. In addition, fundamental aspects of the laser process provide new information about the peculiarities of electronic capture by shallow impurity centers in silicon, lifetimes of nonequilibrium carriers in excited impurity states, and electron-phonon interaction.

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Multifrequency terahertz lasing from codoped silicon crystals

Cited by 14 publications

References 16 publications

Time-Resolved Dynamics of Shallow Acceptor Transitions in Silicon

Time-Resolved Dynamics of Shallow Acceptor Transitions in Silicon

Photon assisted tunneling in pairs of silicon donors

The physical principles of terahertz silicon lasers based on intracenter transitions

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