Multifunctional Al-doped ZnO thin films for vertically aligned liquid crystal devices

Petrov, Stefan; Petrova, Dimitrina; Minh, Chau Nguyen Hong; Marinova, Vera; Napoleonov, Blagovest; Lan, Yu-Pin; Videva, Vladimira; Blagoev, Blagoy; Strijkova, Velichka; Hsu, Ken Yuh; Dimitrov, Dimitre; Lin, Shiuan Huei

doi:10.1016/j.optmat.2023.114498

Cited by 4 publications

(3 citation statements)

References 32 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…These defects are actually related to the solubility of B in the Zn-site in ZnO structure [41]. The band gap energies of all thin films were obtained from the Tauc equation, which is given in equation (7). The band gap of pristine ZnO is found as nearly 3.16 eV.…”

Section: Resultsmentioning

confidence: 99%

“…It is an II-VI group semiconductor with a wide band gap of 3.37 eV, high exciton binding energy of 60 meV, strong piezoelectric structure, and high optical transmittance in the visible region. Therefore, ZnO is used in many fields such as solar cells [5,6], flat panel displays [7], transparent electrode [8], gas sensor [9] and various optoelectronic applications [10]. In addition to these, ZnO is also studied as thermoelectric material due to its high melting point and Seebeck coefficient [11].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Enhancement of structural, optical, electrical, optoelectronic and thermoelectric properties of ZnO thin film via Ni doping and Ni-B co-doping

Üzar,

Abdulaziz,

Erbas

et al. 2024

Phys. Scr.

View full text Add to dashboard Cite

In this study, the effects of nickel (Ni) and boron (B) elements on the structural, optical, electrical, optoelectronic, and thermoelectric properties of zinc oxide (ZnO) material were investigated. Therefore, undoped ZnO, 3% Ni-doped ZnO (Zn0.97Ni0.03O), and 3% Ni-1% B co-doped ZnO (Zn0.96Ni0.03B0.01O) solutions were prepared by the sol gel method. The produced solutions were coated on glass and p-type Si substrates via dip coating and spraying methods in the form of thin films. We produce pure and n-type semiconductors in the form of nanodots which have wurtzite ZnO polycrystalline structure for all samples. Ni and B co-doped sample is morphologically, electrically and optically enhanced the ZnO material with 3.08 eV band gap, homogenous surface and the highest electrical conductivity. In addition, the best material among the three samples that can be used as a visible light-sensitive sensor is Zn0.96Ni0.03B0.01O under feedback voltage. Technologically, this material can be turned into a photodiode device in the form of Au/Zn0.96Ni0.03B0.01O/p-Si. While the obtained ideality factor of ZnO from the forward bias region decreases from 5.7 to 3.4, its barrier height increases from 0.636 eV to 0.667 eV and serial resistance of contact decreases from 121.6 × 103 Ω to 5.6 × 103 Ω with Ni and B co-doping. Ni doping thin film improves the photovoltaic, and thermoelectric properties of ZnO. Ni-doped ZnO sample can be studied in form of the thin films as a thermoelectric material due to its ZT value is nearly 1.73 × 10–4 at 650 K. Its thermoelectric performance is 13 times better than the that of pure ZnO for the same temperature values. The efficiency of Ni-doped ZnO sample as solar cell increases 10 times compared to pure ZnO. In addition to the production of materials with improved energy efficiency, economical products suitable for use in large areas have been obtained in this study.

show abstract

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Enhancement of structural, optical, electrical, optoelectronic and thermoelectric properties of ZnO thin film via Ni doping and Ni-B co-doping

Üzar,

Abdulaziz,

Erbas

et al. 2024

Phys. Scr.

View full text Add to dashboard Cite

show abstract

“…Introducing Al [11], Cd [12], Ga [13], Mn [14] or In [15] into ZnO film significantly enhances the film's conductivity and overall performance. Previous investigation on Al-doped ZnO (AZO) films demonstrate high transparency across the visible range [16]. They also exhibit extreme chemical stability at high-temperature and in hydrogen plasma environments [17].…”

Section: Introductionmentioning

confidence: 99%

Atomic layer deposition of Al-doped ZnO nanomembrane with in situ monitoring

Wang,

Gu,

Zhao

et al. 2024

Nanotechnology

View full text Add to dashboard Cite

Due to shortcomings such as poor homogeneity of Al doping, precisely controlling the thickness, inability to conformally deposit on high aspect ratio devices and high pinhole rate, the applications of Al-doped ZnO (AZO) nanomembrane in integrated optoelectronic devices are remarkably influenced. Here, we report in situ monitoring during the atomic layer deposition (ALD) of AZO nanomembrane by using an integrated spectroscopic ellipsometer. AZO nanomembranes with different compositions were deposited with real-time and precise atomic level monitoring of the deposition process. We specifically investigate the half reaction and thickness evolution during the ALD processes and the influence of the chamber temperature is also disclosed. Structural characterizations demonstrate that the obtained AZO nanomembranes without any post-treatment are uniform, dense and pinhole-free. The transmittances of the nanomembranes in visible range are > 94%, and the optimal conductivity can reach up to 1210 S/cm. The output of current research may pave the way for AZO nanomembrane becoming promising in integrated optoelectronic devices.

show abstract

Terahertz Time-Domain Characterization of Thin Conducting Films in Reflection Mode

Zografopoulos,

Dionisiev,

Minev

et al. 2024

IEEE Trans. Antennas Propagat.

View full text Add to dashboard Cite

Multifunctional Al-doped ZnO thin films for vertically aligned liquid crystal devices

Cited by 4 publications

References 32 publications

Enhancement of structural, optical, electrical, optoelectronic and thermoelectric properties of ZnO thin film via Ni doping and Ni-B co-doping

Enhancement of structural, optical, electrical, optoelectronic and thermoelectric properties of ZnO thin film via Ni doping and Ni-B co-doping

Atomic layer deposition of Al-doped ZnO nanomembrane with in situ monitoring

Terahertz Time-Domain Characterization of Thin Conducting Films in Reflection Mode

Contact Info

Product

Resources

About