Multifunctional Crystalline InGaSnO Phototransistor Exhibiting Photosensing and Photosynaptic Behavior Using Oxygen Vacancy Engineering

Lim, Taebin; Lee, Jiseob; Woo, Deok Ha; Kwak, Joonyoung; Jang, Jin

doi:10.1002/smtd.202300251

Cited by 5 publications

(1 citation statement)

References 55 publications

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“…An impressive learning accuracy of ≈92% is achieved in our NC-FE-ZAO/ZnO TFT (not shown here). Fig 4(d) provides a brief comparison of the learning accuracy of NC-FE-ZAO/ZnO and SiO2/CAAC-IGTO [21] neuromorphic device developed by our group with a reported FE-HZO/IZTO device [22] .…”

Section: -3 / M M Islammentioning

confidence: 99%

22‐3: Negative Capacitance ZAO/ZnO Ferroelectric Thin‐Film Transistor for Neuromorphic Computing

Islam,

Jeong,

Ali

et al. 2024

Symp Digest of Tech Papers

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We report complementary metal‐oxide semiconductor (CMOS)‐compatible, negative capacitance (NC) ferroelectric (FE) zirconium‐aluminum oxide (ZAO)/ZnO thin‐film transistors (TFTs) at a low thermal budget of 360 °C. The NC‐FE‐TFTs demonstrate uniform device‐to‐device performances, featuring a high memory window of 6.7 ± 0.1 V and steep subthreshold swing of 43 ± 4 mV dec–1 . The observation of negative differential resistance at room temperature confirms the NC effect in FE‐ZAO/ZnO TFTs. In addition, a learning accuracy of ≈92% is achieved, highlighting the potential for high precision neuromorphic computing application.

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Section: -3 / M M Islammentioning

confidence: 99%

22‐3: Negative Capacitance ZAO/ZnO Ferroelectric Thin‐Film Transistor for Neuromorphic Computing

Islam,

Jeong,

Ali

et al. 2024

Symp Digest of Tech Papers

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Heater‐Embedded Visible‐Light Phototransistor Based on Cd‐Doped IGZO Film Fabricated through Microwave‐Assisted Sol–Gel Process

Kim,

2024

Advanced Optical Materials

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A phototransistor with a sol–gel‐based Cd‐doped indium‐gallium‐zinc‐oxide (IGZO) photoactive sensing channel on a dual‐purpose indium‐tin‐oxide (ITO) substrate (gate electrode and embedded transparent heater) is reported for the first time. The Cd‐doped IGZO layer is fabricated in situ by a one‐step microwave‐assisted sol–gel process with reduced temperature (<125 °C) and time (<15 min). Despite the wide bandgap of the IGZO (≈3.83 eV) channel, visible‐light (≈2 eV) photosensing is achieved in the developed phototransistor upon Cd doping owing to the reduced bandgap (≈3.71 eV) and increased density of subgap states associated with oxygen vacancies in the metal–oxygen bonding structure. In addition, the Cd‐doped IGZO phototransistor exhibits excellent operational stability (up to 10 000 cycles) and long‐term reliability (up to 30 days). Finally, the embedded Joule heater, based on the inherent transparent ITO substrate, significantly improves the recovery characteristics of the IGZO phototransistor owing to relaxation of the photoexcited charges at the oxygen‐vacancy‐related trap states upon heating, resulting in 100% recovery in a significantly reduced timeframe (≈10 s). These findings pave the way for the development of high‐performance, stable, and reliable visible‐light phototransistors based on wide‐bandgap IGZO active sensing channels with fast and full recovery, expanding their practical applicability of optoelectronics.

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Retina‐Like Neuromorphic Visual Sensor for Sensing Broad‐Spectrum Ultraviolet Light

Xi,

Liu,

Zhang

et al. 2024

Advanced Optical Materials

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The rapidly developing Artificial Intelligence era has an increasing demand for high‐performance organ‐on‐a‐chip systems, especially the vision system, which is the most essential perceptual system for human beings. However, traditional artificial vision systems require multiple functional components, which are not favorable for integration. Neuromorphic visual sensors (NVSs) inspired by the human retina combine visual sensing and multiple preprocessing functions. However, most NVSs require complex structures to achieve both photo sensing and memory, and are difficult to be large‐scale fabricated. Here, a novel In2O3‐Ga2O3 (InGaO) thin‐film‐based NVS with both high photosensitivity and superior photomemory performance is proposed, which can avoid the complex multilayer structure. The device possesses high accuracy optical communication and multiple retina‐like functions. Notably, this InGaO NVS achieves sensing of most UV light, and it has been experimentally confirmed to have excellent photoelectric synaptic performance under both 254 nm and 365 nm UV illumination. This work provides a feasible strategy to assist the human eye in sensing invisible UV light.

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Multifunctional Crystalline InGaSnO Phototransistor Exhibiting Photosensing and Photosynaptic Behavior Using Oxygen Vacancy Engineering

Cited by 5 publications

References 55 publications

22‐3: Negative Capacitance ZAO/ZnO Ferroelectric Thin‐Film Transistor for Neuromorphic Computing

22‐3: Negative Capacitance ZAO/ZnO Ferroelectric Thin‐Film Transistor for Neuromorphic Computing

Heater‐Embedded Visible‐Light Phototransistor Based on Cd‐Doped IGZO Film Fabricated through Microwave‐Assisted Sol–Gel Process

Retina‐Like Neuromorphic Visual Sensor for Sensing Broad‐Spectrum Ultraviolet Light

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