2023
DOI: 10.1021/acsami.3c12714
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Multifunctional Regioisomeric Passivation Strategy for Fabricating Self-Driving, High Detectivity All-Inorganic Perovskite Photodetectors

Yong Wang,
Shuming Ye,
Ziwei Sun
et al.
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Cited by 7 publications
(3 citation statements)
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“…Among the three devices, the IPA-BAI PD obtained the highest maximum R of 0.41 A W –1 around 630 nm. The specific detectivity ( D* ) represents the detection sensitivity of PDs, which can be calculated by the equation . The PD based on IPA-BAI realized the highest D* of 1.01 × 10 13 Jones without a bias voltage in comparison with 2.63 × 10 12 Jones for the control PD and 5.95 × 10 12 Jones for ACN-BAI PD (Figure e).…”
Section: Results and Discussionmentioning
confidence: 99%
“…Among the three devices, the IPA-BAI PD obtained the highest maximum R of 0.41 A W –1 around 630 nm. The specific detectivity ( D* ) represents the detection sensitivity of PDs, which can be calculated by the equation . The PD based on IPA-BAI realized the highest D* of 1.01 × 10 13 Jones without a bias voltage in comparison with 2.63 × 10 12 Jones for the control PD and 5.95 × 10 12 Jones for ACN-BAI PD (Figure e).…”
Section: Results and Discussionmentioning
confidence: 99%
“…This, in turn, compromises the noise performance of the device. The implementation of surface passivation techniques , is anticipated to alleviate the dark current in the device, leading to an improved device performance.…”
Section: Resultsmentioning
confidence: 99%
“…Currently, numerous research studies indicate that the composite structure of CsPb 2 Br 5 and CsPbBr 3 perovskites holds potential advantages for addressing the performance degradation of CsPbX 3 perovskites caused by external factors. The fabrication of multidimensional composite films by vapor deposition as a common method could prevent the impact of solvents on the solubility of the underlying thin film. , This method is suitable for fabricating dual-phase composite materials of 2D CsPb 2 Br 5 and three-dimensional (3D) CsPbBr 3 . Moreover, the majority of perovskite devices are made using thin film structures. The defects and grain boundaries present in these films frequently result in subpar optoelectronic performance of perovskite thin film devices. Compared to bulk or planar materials, nanowires provide a larger surface area that facilitates more efficient light absorption. Moreover, the constraints imposed by the wire-like structure enable better control of the direction of charge carrier transport, thereby reducing potential losses during exciton transport. , For example, Shin et al introduced CsPbBr 3 –CsPb 2 Br 5 biphasic perovskite nanowires as an interlayer in perovskite solar cells, achieving effective charge carrier transport within the device.…”
Section: Introductionmentioning
confidence: 99%