2018
DOI: 10.1016/j.orgel.2018.01.041
|View full text |Cite
|
Sign up to set email alerts
|

Multifunctional sensor based on organic field-effect transistor and ferroelectric poly(vinylidene fluoride trifluoroethylene)

Abstract: A B S T R A C TA multifunctional sensor that responds to all -static/quasi-static or dynamic temperature or force -is reported. The sensor is based on a ferroelectric poly(vinylidene fluoride trifluoroethylene) (P(VDF-TrFE)) capacitor connected to the gate of organic field-effect transistor (OFET). Both, the P(VDF-TrFE) capacitance and the output voltage of the P(VDF-TrFE)/OFET sensor exhibit a logarithmic response to static compressive force, leading to higher sensitivity for small forces. In addition, both t… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

0
42
0

Year Published

2018
2018
2023
2023

Publication Types

Select...
6

Relationship

3
3

Authors

Journals

citations
Cited by 50 publications
(42 citation statements)
references
References 28 publications
0
42
0
Order By: Relevance
“…The data of Fig. 6 suggests that regardless of the value of R d , V ds operation point of at least −2.5 V is needed to reach the maximum voltage gain when V g oscillates around −2 V. One can also infer that the resistance between source and drain is ∼100 k , a factor of ∼10 smaller when compared to DNTT transistors with standard source/drain contacts with L = 30 µm and W = 1 mm [10]. This decrease is important for the reduction in both V dd and R d .…”
Section: Resultsmentioning
confidence: 89%
See 1 more Smart Citation
“…The data of Fig. 6 suggests that regardless of the value of R d , V ds operation point of at least −2.5 V is needed to reach the maximum voltage gain when V g oscillates around −2 V. One can also infer that the resistance between source and drain is ∼100 k , a factor of ∼10 smaller when compared to DNTT transistors with standard source/drain contacts with L = 30 µm and W = 1 mm [10]. This decrease is important for the reduction in both V dd and R d .…”
Section: Resultsmentioning
confidence: 89%
“…Being an integral part of an analog sensor, the OTFT can provide two functions. It can act as a signal transducer by converting the physical stimulus to voltage [10] and a signal amplifier. The transconductance and geometry of the transistor play an important role for the latter.…”
Section: Introductionmentioning
confidence: 99%
“…While at an early stage, multifunctional sensors based on piezoelectric OFET have been made of several subcells and each cell acts as a single mode sensor. [92] Based on this capacitance change, Hannah et al fabricated a multifunctional sensor include PVDF-TrFE capacitor combined with an OFET for static/quasi-static force or temperature; see Figure 7a. Using a sequential and area selective poling process, one composite element can be either piezoelectric and another is pyroelectric for pressure and temperature sensing, respectively.…”
Section: Transistorsmentioning
confidence: 99%
“…[39,91] For instance, Graz et al [91] fabricated a flexible bifunctional sensor with two integrated sensing elements www.advmattechnol.de based on a composite foil of lead titanate (PbTiO 3 ) nanoparticles embedded in an PVDF-TrFE matrix. [92] In the above discussions, the sensors are able to detect force or temperature at one time. The capacitance of PVDF-TrFE can be changed with a "static" force or temperature, and the changes in output are not driven by the piezoelectricity or pyroelectricity of PVDF-TrFE.…”
Section: Transistorsmentioning
confidence: 99%
See 1 more Smart Citation