Multijunction Solar Cell Designs Using Silicon Bottom Subcell and Porous Silicon Compliant Membrane

Wilkins, Matthew M.; Boucherif, Abderraouf; Beal, Richard; Haysom, Joan E.; Wheeldon, Jeffrey F.; Aimez, Vincent; Arès, Richard; Hall, Trevor J.; Hinzer, Karin

doi:10.1109/jphotov.2013.2261931

Cited by 27 publications

(12 citation statements)

References 16 publications

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“…Calabrese et al made porous structure on Si substrate to improve the crystalline quality of Ge virtual substrate [102]. Grassman et al grew a GaAsP cell on Si substrate directly using MBE [103], García-Tabarés et al grew a GaP cell on Si substrate directly using metalorganic vapor phase epitaxy (MOVPE) [104] and Wilkins et al grew a GaAs cell on Si substrate which was also made porous structure directly using chemical beam epitaxy [105], but above researchers did not report the efficiencies of the cells, thus it is still hard to grow high quality III-V multi-junction solar cell on Si substrate directly. To overcome the constraints of lattice mismatch between III-V materials and Si in above hetero-epitaxy processes, Derendorf et al used wafer bonding technology to make the three junction GaInP/GaAs/Si cell [106], the efficiency was 23.6% under 71 suns [107].…”

Section: Silicon-based Multi-junction Cellmentioning

confidence: 99%

A review of concentrator silicon solar cells

Xing

Han

Wang

et al. 2015

Renewable and Sustainable Energy Reviews

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Section: Silicon-based Multi-junction Cellmentioning

confidence: 99%

A review of concentrator silicon solar cells

Xing

Han

Wang

et al. 2015

Renewable and Sustainable Energy Reviews

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“…The internal quantum efficiency (IQE) is defined as the number of minority carriers contributing to the short circuit current divided by the number of photons entering the cell. In the experiment, the IQE can be obtained from the light reflectance (R) and the EQE as follows [41]:…”

Section: Quantum Efficiency Measurementsmentioning

confidence: 99%

Effect of porosity on the electrical and photoelectrical properties of textured n+ p silicon solar cells

Youssef

El-Nahass

El-Zaiat

et al. 2015

Materials Science in Semiconductor Processing

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“…Using a similar finite element analysis modeling approach, Brown et al showed that a 2J InGaN/Si tandem cell could achieve an efficiency of 28.9% under AM1.5 illumination (Brown et al 2010). Triple-junction InGaP/GaAs// Si solar cells have also been numerically investigated as a function of TDD under 1 sun Wilkins et al 2013;) and concentrated sunlight . Efficiencies exceeding 33% seems feasible at a realistic TDD of 10 6 cm −2 under 200-sun AM1.5d (1,000 W/m 2 ) spectrum ).…”

Section: Iii-v and Si Solar Cell Design And Challengesmentioning

confidence: 99%

III–V Multijunction Solar Cell Integration with Silicon: Present Status, Challenges and Future Outlook

Jain

Hudait

2014

Energy Harvesting and Systems

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Achieving high-efficiency solar cells and at the same time driving down the cell cost has been among the key objectives for photovoltaic researchers to attain a lower levelized cost of energy (LCOE). While the performance of silicon (Si) based solar cells have almost saturated at an efficiency of~25%, III-V compound semiconductor based solar cells have steadily shown performance improvement at~1% (absolute) increase per year, with a recent record efficiency of 44.7%. Integration of such high-efficiency III-V multijunction solar cells on significantly cheaper and large area Si substrate has recently attracted immense interest to address the future LCOE roadmaps by unifying the high-efficiency merits of III-V materials with low-cost and abundance of Si. This review article will discuss the current progress in the development of III-V multijunction solar cell integration onto Si substrate. The current state-of-the-art for III-Von-Si solar cells along with their theoretical performance projections is presented. Next, the key design criteria and the technical challenges associated with the integration of III-V multijunction solar cells on Si are reviewed. Different technological routes for integrating III-V solar cells on Si substrate through heteroepitaxial integration and via mechanical stacking approach are presented. The key merits and technical challenges for all of the till-date available technologies are summarized. Finally, the prospects, opportunities and future outlook toward further advancing the performance of III-V-on-Si multijunction solar cells are discussed. With the plummeting price of Si solar cells accompanied with the tremendous headroom available for improving the III-V solar cell efficiencies, the future prospects for successful integration of III-V solar cell technology onto Si substrate look very promising to unlock an era of next generation of high-efficiency and low-cost photovoltaics.

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Multijunction Solar Cell Designs Using Silicon Bottom Subcell and Porous Silicon Compliant Membrane

Cited by 27 publications

References 16 publications

A review of concentrator silicon solar cells

A review of concentrator silicon solar cells

Effect of porosity on the electrical and photoelectrical properties of textured n+ p silicon solar cells

III–V Multijunction Solar Cell Integration with Silicon: Present Status, Challenges and Future Outlook

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