Multilayer Approach in Light-Emitting Transistors

Generali, Gianluca; Toffanin, Stefano; Capelli, Raffaella

doi:10.5772/14475

Cited by 1 publication

(1 citation statement)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The mobility value (µ), calculated from the locus curve of the OFET, on Si ++ /SiO 2 /PMMA is: µ p = 0.04 cm 2 /Vs, the threshold voltage (V th ) = -4V. On the ITO platform, instead, the measured values are: µ p = 0.09 cm 2 /Vs and V th =-25V [8]. The electrical curves (locus and transfer) in both platforms present nearly no hysteresis between the forward and backward branches.…”

Section: Resultsmentioning

confidence: 99%

Influence of the substrate platform on the opto-electronic properties of multi-layer organic light-emitting field-effect transistors

Generali¹,

Dinelli²,

Capelli³

et al. 2011

J. Phys. D: Appl. Phys.

Self Cite

View full text Add to dashboard Cite

In this paper, we present a study of the effects of the influence of the substrate platform on the properties of a three layer vertical hetero-junction made of thin films of α,ω-diperfluorohexyl-4T (DHF4T), a blend of tris(8-hydroxyquinolinato)aluminium (Alq3) and 4-(dicyanomethylene)-2-methyl-6-(p-dimethylaminostyryl)-4H-pyran (DCM), and α,ω-dihexyl-quaterthiophene (DH4T).The hetero-junction represents the active component of an Organic Light-Emitting Transistor (OLET). The substrate platforms investigated in this study are: glass/Indium-Tin-Oxide (ITO)/Poly(methyl-methacrylate) (PMMA) and Si ++ /Silicon oxide (SiO 2 )/PMMA. The first platform is almost completely transparent to light and therefore is very promising for use in OLET applications. The second one has been chosen for comparison as it employs standard microelectronic materials, i.e. Si ++ /SiO 2 . We show how different gate materials and structure can affect the relevant field-effect electrical characteristics, such as the charge mobility and threshold voltage. By means of an Atomic Force Microscopy analysis, a systematic study has been made in order to correlate the morphology of the active layers with the electrical properties of the devices.

show abstract

Section: Resultsmentioning

confidence: 99%