Multilayer chromium based coatings grown by atmospheric pressure direct liquid injection CVD

Chromium carbide growth at low temperature by a highly efficient DLI-MOCVD process in effluent recycling mode

“…The bis(arene)M(0) precursors, where M is a transition metal in the oxidation state zero of the columns 5 and 6 are an important family of CVD precursors for low temperature deposition of carbides, nitrides and even metal coatings. This is supported by several works using these precursors on carbides of V [16], Nb [17], Ta [17], Cr [18][19][20][21], Mo [22] and W [22], nitrides of V [16] and Cr [23] and metal V [16] and Cr [24,25], as well as nanostructured multilayer Cr-based coatings [26].…”

“…The Stoney's equation is applicable with an error which does not exceed 5%. From the measurement of the change of curvature before and after deposition, compressible residual stresses of reactive, thermally stable in the deposition temperature range, and therefore does not participate in the growth mechanism as found using toluene and cyclohexane [26,65].…”

Evidence for a Cr metastable phase as a tracer in DLI-MOCVD chromium hard coatings usable in high temperature environment

“…An even more surprising challenge was to find that when the emerging technology of direct liquid injection (DLI) is implemented for supplying a cold-wall reactor operating under atmospheric pressure with high vapor flow rates, the carbon incorporation inhibitors were still effective while large amounts of hydrocarbon solvent were injected with the precursor [22][23][24]. Indeed DLI-MOCVD is an alternative process where the precursor is diluted or dissolved in a liquid organic solvent.…”

“…An appropriate choice of precursor provides high yields [15]. Thus, DLI-MOCVD process for Cr deposition has been successful using C 6 Cl 6 [22][23][24] and C 6 H 5 SH [24] as inhibitors and bis(arene)chromium as metal source.…”

SiC coatings grown by liquid injection chemical vapor deposition using single source metal-organic precursors

“…Such processes are mainly used in microelectronics to deposit functional oxide thin films [15]. The growth of monolithic [16] and multilayer nanostructured chromium carbide and nitride coatings [17] was also reported by DLICVD. Regarding SiC coatings, a solution of hexamethyldisiloxane ((CH 3 ) 3 SiOSi(CH 3 ) 3 ) in ethanol was injected by a DLI system in a plasma-assisted CVD reactor for the growth of SiC and SiN x O y C z coatings, at 1023 K, using thermal Ar/H 2 and Ar/H 2 /N 2 plasma, respectively [18].…”