The electret consisting of a Si 3 N 4 pattern on a SiO 2 layer is studied. A charge pattern on 1.3 µm-wide Si 3 N 4 electret lines is successfully formed with a voltage of 80 V between charged pattern and substantially discharged SiO 2 . The method for making a charge pattern is optimized for reaching the highest voltage on narrow lines. A yearlong sample aging on open air shows that there is no dependence of charge retention on line width within the 1 cm-1.3 µm range. Considering the decay of surface potential during 1 year, the estimated charge lifetime in the patterned electret exceeds 75 years.Index Terms-Electret, inorganic electret, silicon oxide, silicon nitride.
1530-437X © 2013 IEEE