Multilayer photosensitive structures based on porous silicon and rare-earth-element compounds: Study of spectral characteristics

Identification of (Tb,Eu)9.43(SiO4)6O2−δ Oxy-Apatite Structures as Nanometric Inclusions in Annealed (Eu,Tb)-Doped ZnO/Si Junctions: Combined Electron Diffraction and Chemical Contrast Imaging Studies

“…For the 1100 °C annealing temperature, the peaks become sharper and well-defined and the global intensity increases significantly as shown by the PL plot collected at 1100 °C. The fine structure of the PL signal is associated with the local environment of the RE, 39 suggesting that the ZnO host matrix has been drastically affected by this high annealing temperature. In a previous work, Davesnne et al 5,6 have shown that (Eu,Tb)-codoped ZnO/Si structures annealed at 900 °C led to a silicate phase formation favoring Eu 3+ emission and a concomitant energy transfer from Tb 3+ to Eu 3+ .…”

“…For the 1100 °C annealing temperature, the peaks become sharper and well-defined and the global intensity increases significantly as shown by the PL plot collected at 1100 °C. The fine structure of the PL signal is associated with the local environment of the RE, suggesting that the ZnO host matrix has been drastically affected by this high annealing temperature.…”