Multilayer ReS<sub>2</sub> Photodetectors with Gate Tunability for High Responsivity and High-Speed Applications

Thakar, Kartikey; Mukherjee, Bablu; Grover, Sameer; Kaushik, Neeraj; Deshmukh, Mandar M.; Lodha, Saurabh

doi:10.1021/acsami.8b11248

Cited by 94 publications

(103 citation statements)

References 67 publications

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“…For FL ReS2, Raman peaks at 161 and 212 cm −1 are identified as the E2g (in-plane) and A1g (out-ofplane) vibration modes, respectively. 28 FL WSe2 exhibits A1g and 2LA(M) (second order Raman mode) peaks at 249 and 257 cm −1 respectively. 44 Characteristic peaks corresponding to both materials are distinctly seen in the overlap region indicating good interface quality.…”

Section: Resultsmentioning

confidence: 99%

Near-Direct Bandgap WSe₂/ReS₂ Type-II pn Heterojunction for Enhanced Ultrafast Photodetection and High-Performance Photovoltaics

et al. 2020

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PN heterojunctions comprising layered van der Waals (vdW) semiconductors have been used to demonstrate current rectifiers, photodetectors, and photovoltaic devices. However, a direct or neardirect bandgap at the heterointerface that can significantly enhance optical generation, for high light absorbing few/multi-layer vdW materials, has not yet been shown. In this work, for the first time, few-layer group-6 transition metal dichalcogenide (TMD) WSe2 is shown to form a sizeable (0.7 eV) near-direct bandgap with type-II band alignment at its interface with the group-7 TMD ReS2 through density functional theory calculations. Further, the type-II alignment and photogeneration across the interlayer bandgap have been experimentally confirmed through micro-photoluminescence and IR 2 photodetection measurements, respectively. High optical absorption in few-layer flakes, large conduction and valence band offsets for efficient electron-hole separation and stacking of light facing, direct bandgap ReS2 on top of gate tunable WSe2 are shown to result in excellent and tunable photodetection as well as photovoltaic performance through flake thickness dependent optoelectronic measurements. Few-layer flakes demonstrate ultrafast response time (5 µs) at high responsivity (3 A/W) and large photocurrent generation and responsivity enhancement at the heterostructure overlap region (10-100×) for 532 nm laser illumination. Large open circuit voltage of 0.64 V and short circuit current of 2.6 µA enables high output electrical power. Finally, long term air-stability and a facile single contact metal fabrication process makes the multi-functional few-layer WSe2/ReS2 heterostructure diode technologically promising for next-generation optoelectronic applications.The semiconducting group-6 TMD WSe2, generally found in trigonal prismatic phase, 17 is an indirect bandgap material in its bulk form. 18,19 However, group-7 TMD e.g. 1T phase of ReS2 is distorted octahedral in structure 17,20 and exhibits direct (or, near-direct) bandgap at (or, close to) the Γ point of the Brillouin zone (BZ). Interestingly, unlike the group-6 TMDs, ReS2 exhibits a unique property owing to its distorted structure and weak interlayer coupling-the direct or near-direct nature of its bandgap remains unchanged from monolayer to bulk. [20][21][22] Closer examination of the bandstructure of group-7 TMDs reveals that the conduction band minimum of ReS2 remains at the Γ point, irrespective of the number of layers. 20,23 But for group-6 TMDs (such as WSe2) the valence band maximum relocates from K to Γ point of the BZ with increasing number of layers. 18,24 It is important to note that the valence band maximum at the Γ point differs in energy only slightly from that at the K point. 18 This gives rise to an increased probability of direct as well as indirect transitions from the Γ and the K valence maxima of WSe2 to the Γ conduction minimum of ReS2 respectively, for a predicted type-II band alignment. The possibility of a direct bandgap transition is not observed in a heter...

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Section: Resultsmentioning

confidence: 99%

Near-Direct Bandgap WSe₂/ReS₂ Type-II pn Heterojunction for Enhanced Ultrafast Photodetection and High-Performance Photovoltaics

et al. 2020

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“…Some of the reports covering these topics have been discussed below. Figure 3(a) (i) shows the 3D schematic of supported and suspended channel FET architectures with ReS 2 as the channel material [82]. The two device architectures represent different trap densities that can be used to probe the effect of traps on optoelectronic performance.…”

Section: Photodetectorsmentioning

confidence: 99%

Optoelectronic and photonic devices based on transition metal dichalcogenides

Thakar

Lodha

2020

Mater. Res. Express

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Transition metal dichalcogenides (TMDCs) are a family of two-dimensional layered materials (2DLMs) with extraordinary optical properties. They present an attractive option for future multifunctional and high-performance optoelectronics. However, much remains to be done to realize a mature technology for commercial applications. In this review article, we describe the progress and scope of TMDC devices in optical and photonic applications. Various photoresponse mechanisms observed in such devices and a brief discussion on measurement and analysis methods are described. Three main types of optoelectronic devices, namely photodetectors, photovoltaics and lightemitting devices are discussed in detail with a focus on device architecture and operation. Examples showing experimental integration of 2DLM-based devices with silicon photonics are also discussed briefly. A wide range of data for key performance metrics is analysed with insights into future directions for device design, processing and characterization that can help overcome present gaps and challenges. While the field is still in its infancy and requires significant efforts toward standardizing various approaches towards a mature technology, it has already shown promising results in broader aspects of compatibility, integration and performance for future electronics. Sensors are increasingly becoming an integrated part of the global electronic eco-system with the rise of data-driven technologies. There is a growing need for networks of cost-effective, robust and reliable sensors and their integration with present technologies. Optoelectronic and photonic devices are of importance for both sensing as well as high-speed optical communication applications. 2DLMs demonstrate significant light-matter interaction that is tunable with external physical and electronic parameters such as pressure, strain, electric and magnetic field [1-6]. Moreover, 2DLMs show strong dependence of their band structure on thickness with a transition to direct bandgap in monolayers in most of the known 2DLMs [7][8][9]. Graphene has been the most studied material since its discovery in 2004 [10][11][12]. Apart from graphene, there are nearly 1500 possible 2DLMs with a wide range of material properties as predicted by first principle simulations [13]. Transition metal dichalcogenides (TMDCs) are a family of 2DLMs in the form of MX 2 compounds, where M is a transition metal (Mo, W, Re) and X is a chalcogen (S, Se, Te). TMDCs are promising for electronic applications due to their semiconducting behaviour as opposed to semi-metallic graphene, and better thermal stability than materials such as black phosphorus and silicene [14][15][16][17][18][19]. Optoelectronic devices based on TMDCsTMDCs have been the most studied 2DLMs, apart from graphene and black phosphorus, for electronic and optoelectronic device applications [20,21]. They have a sizeable bandgap in the visible and near infrared (NIR) range (∼1-2 eV) that is optimal for optoelectronic sensors and light-emitting sources for short-ran...

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Section: Applicationsmentioning

confidence: 99%

“…Reproduced with permission. [98] Copyright 2018, American Chemical Society. g) Photocurrent response of the ReS 2 photodetector under various V ds , fixing P light at 20 nW and V bg at À50 V. h) Weak signal detection in the ReS 2 photodetector.…”

Section: Photodetectors Based On Resmentioning

confidence: 99%

Electronic and Optoelectronic Applications Based on ReS₂

Xiong

Chen

Zhang

et al. 2019

Physica Rapid Research Ltrs

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With continuous research into two‐dimensional transition metal dichalcogenides (TMDs), a great number of high‐performance devices are emerging due to the unique structures and versatile properties of TMDs. As a representative of the group‐VII TMDs, rhenium disulfide (ReS2) has attracted increasing attention because the distorted octahedral crystal structure makes it distinctive from more widely known TMDs members, such as MoS2 and WSe2. It features layer‐independent electrical and anisotropic optical properties which are suitable for the applications of field effect transistors (FETs) and photodetectors. This review focuses on the recent research work about the electronic and optoelectronic applications based on novel 2D ReS2. In the first part, the unique crystal structures and properties are introduced. This is followed by the various preparation methods. Next, high‐performance FETs and photodetectors based on ReS2 are presented. Finally, conclusions are drawn and prospects proposed.

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Multilayer ReS₂ Photodetectors with Gate Tunability for High Responsivity and High-Speed Applications

Cited by 94 publications

References 67 publications

Near-Direct Bandgap WSe₂/ReS₂ Type-II pn Heterojunction for Enhanced Ultrafast Photodetection and High-Performance Photovoltaics

Near-Direct Bandgap WSe₂/ReS₂ Type-II pn Heterojunction for Enhanced Ultrafast Photodetection and High-Performance Photovoltaics

Optoelectronic and photonic devices based on transition metal dichalcogenides

Electronic and Optoelectronic Applications Based on ReS₂

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Multilayer ReS2 Photodetectors with Gate Tunability for High Responsivity and High-Speed Applications

Cited by 94 publications

References 67 publications

Near-Direct Bandgap WSe2/ReS2 Type-II pn Heterojunction for Enhanced Ultrafast Photodetection and High-Performance Photovoltaics

Near-Direct Bandgap WSe2/ReS2 Type-II pn Heterojunction for Enhanced Ultrafast Photodetection and High-Performance Photovoltaics

Optoelectronic and photonic devices based on transition metal dichalcogenides

Electronic and Optoelectronic Applications Based on ReS2

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Multilayer ReS₂ Photodetectors with Gate Tunability for High Responsivity and High-Speed Applications

Near-Direct Bandgap WSe₂/ReS₂ Type-II pn Heterojunction for Enhanced Ultrafast Photodetection and High-Performance Photovoltaics

Near-Direct Bandgap WSe₂/ReS₂ Type-II pn Heterojunction for Enhanced Ultrafast Photodetection and High-Performance Photovoltaics

Electronic and Optoelectronic Applications Based on ReS₂