2023
DOI: 10.1021/acsanm.3c03344
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Multilayer Solid-Phase Epitaxy of La2O2Bi Thin Films toward Higher Electrical Conduction in a Monatomic Bi Square Net Semimetal

Yuki Yamamoto,
Hideyuki Kawasoko,
Tomoteru Fukumura
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“…4 Recently, we have developed a multilayer solid-phase epitaxy method suitable for compounds containing highly volatile elements such as Sb or Bi, realizing RE 2 O 2 Pn thin films (RE = rare-earth, Pn = Sb, Bi). [24][25][26][27] By using this method, we obtained highly crystalline LaSb thin films grown at high temperatures near 1000 °C, resulting in a low resistivity at room temperature comparable to that of LaSb bulk single crystals. 28 In this study, we grew (001)-oriented LaBi thin films at high temperatures using the solid-phase reaction of La/Bi multilayer precursors.…”
Section: Introductionmentioning
confidence: 99%
“…4 Recently, we have developed a multilayer solid-phase epitaxy method suitable for compounds containing highly volatile elements such as Sb or Bi, realizing RE 2 O 2 Pn thin films (RE = rare-earth, Pn = Sb, Bi). [24][25][26][27] By using this method, we obtained highly crystalline LaSb thin films grown at high temperatures near 1000 °C, resulting in a low resistivity at room temperature comparable to that of LaSb bulk single crystals. 28 In this study, we grew (001)-oriented LaBi thin films at high temperatures using the solid-phase reaction of La/Bi multilayer precursors.…”
Section: Introductionmentioning
confidence: 99%