“…4 Recently, we have developed a multilayer solid-phase epitaxy method suitable for compounds containing highly volatile elements such as Sb or Bi, realizing RE 2 O 2 Pn thin films (RE = rare-earth, Pn = Sb, Bi). [24][25][26][27] By using this method, we obtained highly crystalline LaSb thin films grown at high temperatures near 1000 °C, resulting in a low resistivity at room temperature comparable to that of LaSb bulk single crystals. 28 In this study, we grew (001)-oriented LaBi thin films at high temperatures using the solid-phase reaction of La/Bi multilayer precursors.…”