Multilayer structural determination of the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi mathvariant="normal">GaAs</mml:mi><mml:mo>(</mml:mo><mml:mn>1</mml:mn><mml:mn /><mml:mi>¯</mml:mi><mml:mn>1</mml:mn><mml:mi>¯</mml:mi><mml:mn>1</mml:mn><mml:mi>¯</mml:mi><mml:mo>)</mml:mo><mml:mn>2</mml:mn><mml:mn /><mml:mo>×</mml:mo><mml:mn>2</mml:mn></mml:math>reconstruction by automated tensor LEED

Deng, B. C.; Yu, Zhenxin; Xu, Geng; Mrstik, B. J.; Tong, S. Y.

doi:10.1103/physrevb.59.9775

Cited by 10 publications

(4 citation statements)

References 21 publications

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“…11) is shifted upwards by z 1 = 0.56 # e, i.e., it is obviously rehybridized towards p 3 , indicating that its DB is filled with two electrons. Quite recently, the LEED intensity analysis was essentially confirmed by another group [58].…”

Section: Gaas(111)a(2 â 2)mentioning

confidence: 76%

Structure and Surface Core-Level Shifts of GaAs Surfaces Prepared by Molecular-Beam Epitaxy

Jacobi¹,

Platen²,

Setzer³

2000

phys. stat. sol. (b)

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A and " 1 " 1 " 4B surfaces were prepared by molecular-beam epitaxy (MBE) and analyzed in situ by photoelectron spectroscopy of the Ga and As 3d core levels using synchrotron radiation. An overview of the results is given. For each surface also a brief summary of its structure is added. It is shown how surface corelevel shifts (SCLS) act as a tool supporting the structure evaluation of these surfaces. The (001) and (110) surfaces are touched only briefly for comparison. The (111) surfaces are discussed more deeply. The high-index surfaces can be characterized as follows: (113)A exhibits a low-energy surface and a new type of reconstruction which consists of As-dimer zig-zag chains; (112)A and " 1 " 1 " 2B are heavily faceted and (114)A and " 1 " 1 " 4B are quite well understood in analogy to the (001) surface.Recently, high-index III±V semiconductor surfaces achieved great interest as possible substrates for the growth of low-dimensional quantum structures. The nonpolar {112} Review Article

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Section: Gaas(111)a(2 â 2)mentioning

confidence: 76%

Structure and Surface Core-Level Shifts of GaAs Surfaces Prepared by Molecular-Beam Epitaxy

Jacobi¹,

Platen²,

Setzer³

2000

phys. stat. sol. (b)

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“…For this reason, we did not test alternative models. Quite recently, the LEED intensity analysis was essentially confirmed by another group [58]. However, considering the delicate surface structure of the GaAs " 1 " 1 " 1B(2 Â 2) surface with the As trimers, the R-factors are quite satisfactory.…”

Section: Gaasmentioning

confidence: 91%

Structure and Surface Core-Level Shifts of GaAs Surfaces Prepared by Molecular-Beam Epitaxy

Jacobi

Platen

Setzer

2000

phys. stat. sol. (b)

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The GaAs(001), (110), (111)A, (1¯1¯1¯)B, (112)A, (1¯1¯2¯)B, (113) A, (1¯1¯3¯)B, (114)A and (1¯1¯4¯)B surfaces were prepared by molecular‐beam epitaxy (MBE) and analyzed in situ by photoelectron spectroscopy of the Ga and As 3d core levels using synchrotron radiation. An overview of the results is given. For each surface also a brief summary of its structure is added. It is shown how surface core‐level shifts (SCLS) act as a tool supporting the structure evaluation of these surfaces. The (001) and (110) surfaces are touched only briefly for comparison. The (111) surfaces are discussed more deeply. The high‐index surfaces can be characterized as follows: (113)A exhibits a low‐energy surface and a new type of reconstruction which consists of As‐dimer zig‐zag chains; (112)A and (1¯1¯2¯)B are heavily faceted and (114)A and (1¯1¯4¯)B are quite well understood in analogy to the (001) surface.

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“…As for the structural and physical properties of the GaAs(111)B surface, experimental and theoretical studies [45][46][47][48][49][50][51][52][53][54][55] structures have revealed that the stable surface reconstruction depends on the chemical potential of As. The (2 Â 2) surface with As trimer is stable over a wide range of As chemical potential [47,50].…”

Section: Gaasmentioning

confidence: 99%

Ab initio-Based Approach to Crystal Growth

Kangawa

2015

Handbook of Crystal Growth

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Multilayer structural determination of theGaAs(1¯1¯1¯)2×2reconstruction by automated tensor LEED

Cited by 10 publications

References 21 publications

Structure and Surface Core-Level Shifts of GaAs Surfaces Prepared by Molecular-Beam Epitaxy

Structure and Surface Core-Level Shifts of GaAs Surfaces Prepared by Molecular-Beam Epitaxy

Structure and Surface Core-Level Shifts of GaAs Surfaces Prepared by Molecular-Beam Epitaxy

Ab initio-Based Approach to Crystal Growth

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