Multilayered InGaN/GaN structure vs. single InGaN layer for solar cell applications: A comparative study

Gmili, Youssef El; Orsal, G.; Pantzas, Konstantinos; Moudakir, T.; Sundaram, S.; Patriarche, G.; Hester, James; Ahaitouf, Ali; Salvestrini, Jean Paul; Ougazzaden, A.

doi:10.1016/j.actamat.2013.07.041

Cited by 39 publications

(21 citation statements)

References 34 publications

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“…Such clusters in InGaN epilayers have been previously reported elsewhere. [38][39][40][41] Cathodoluminescence mappings of their optical emission have revealed a red shift of the emission inside these clusters, in agreement with observed the increase in the concentration. The cluster density is correlated to the density of V-pits 40,41 that is, in turn, correlated to the density of threading dislocations already present in the substrate.…”

Section: A Suppression Of Compositional Fluctuationssupporting

confidence: 84%

Role of compositional fluctuations and their suppression on the strain and luminescence of InGaN alloys

Pantzas

Patriarche

Tománek

et al. 2015

Journal of Applied Physics

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Advanced electron microscopy techniques are combined for the first time to measure the composition, strain, and optical luminescence, of InGaN/GaN multi-layered structures down to the nanometer scale. Compositional fluctuations observed in InGaN epilayers are suppressed in these multi-layered structures up to a thickness of 100 nm and for an indium composition of 16%. The multi-layered structures remain pseudomorphically accommodated on the GaN substrate and exhibit single-peak, homogeneous luminescence so long as the composition is homogeneous. V C 2015 AIP Publishing LLC. [http://dx.

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Section: A Suppression Of Compositional Fluctuationssupporting

confidence: 84%

Role of compositional fluctuations and their suppression on the strain and luminescence of InGaN alloys

Pantzas

Patriarche

Tománek

et al. 2015

Journal of Applied Physics

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“…The AFM images in Fig. 1g and h show clear atomic-step morphologies35. The good optical quality and smooth morphology make these LED chips an ideal signal source to achieve VLC via the different available bands.…”

Section: Resultsmentioning

confidence: 92%

Tuning carrier lifetime in InGaN/GaN LEDs via strain compensation for high-speed visible light communication

Huang

Jiang

et al. 2016

Sci Rep

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In recent years, visible light communication (VLC) technology has attracted intensive attention due to its huge potential in superior processing ability and fast data transmission. The transmission rate relies on the modulation bandwidth, which is predominantly determined by the minority-carrier lifetime in III-group nitride semiconductors. In this paper, the carrier dynamic process under a stress field was studied for the first time, and the carrier recombination lifetime was calculated within the framework of quantum perturbation theory. Owing to the intrinsic strain due to the lattice mismatch between InGaN and GaN, the wave functions for the holes and electrons are misaligned in an InGaN/GaN device. By applying an external strain that “cancels” the internal strain, the overlap between the wave functions can be maximized so that the lifetime of the carrier is greatly reduced. As a result, the maximum speed of a single chip was increased from 54 MHz up to 117 MHz in a blue LED chip under 0.14% compressive strain. Finally, a bandwidth contour plot depending on the stress and operating wavelength was calculated to guide VLC chip design and stress optimization.

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“…We can also notice a broad luminescence band centered around 590 nm which is attributed to the GaN defect band. In the planar InGaN, the presence of the two luminescence bands can be attributed to the presence of strained InGaN1 and relaxed InGaN2 sublayers [11,12] whereas the two luminescence bands observed in the nanostripe might be attributed to the fully relaxed InGaN1 and InGaN2 regions as shown in Fig. 7.…”

Section: Figure 2 Tem Images Of A) C-sample Compared To B) M-samplementioning

confidence: 98%

“…The InGaN sublayer thickness for the M-sample was decreased based on the simulation results [10]. According to CL hyperspectral mapping done for both C-and M-samples [11], the spatial variations of the luminescence wavelength position for the C sample shows two different phases: one characterized by a luminescence peak wavelength centered at λ ≈ 435 nm, and another one characterized by a luminescence peak wavelength centered at λ ≈ 490 nm. In comparison the M-sample shows only one phase characterized by a luminescence peak wavelength centered at λ ≈ 433 nm with low inhomogeneity except some small variations).…”

Section: Figure 2 Tem Images Of A) C-sample Compared To B) M-samplementioning

confidence: 99%

Investigation of new approaches for InGaN growth with high indium content for CPV application

Arif

Streque

Gmili

et al. 2015

AIP Conference Proceedings

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Multilayered InGaN/GaN structure vs. single InGaN layer for solar cell applications: A comparative study

Cited by 39 publications

References 34 publications

Role of compositional fluctuations and their suppression on the strain and luminescence of InGaN alloys

Role of compositional fluctuations and their suppression on the strain and luminescence of InGaN alloys

Tuning carrier lifetime in InGaN/GaN LEDs via strain compensation for high-speed visible light communication

Investigation of new approaches for InGaN growth with high indium content for CPV application

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