Multilayers for high-Tc superconducting electric field effect devices

Joosse, K.; Boguslavskij, Y.M.; Gerritsma, G.J.; Rogalla, Horst

doi:10.1016/0925-8388(93)90839-f

Cited by 9 publications

(6 citation statements)

References 4 publications

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“…The fabrication of our PBCO/YBCOISrTiOJAu multilayers and device structures has been deseribed previously [3]. Laser scanning microscopy [5] and both high and low magnification TEM showed excellent uniformity in thickness and current distribution over the complete device area of typically 100x50 ~tm 2.…”

Section: Introductionmentioning

confidence: 91%

Electric field effect on epitaxial YBa2Cu3O7−x thin films

Joosse

Boguslavskij

Gerritsma

et al. 1994

Physica B: Condensed Matter

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By applying a strong electric field perpendicular to the surface of an ultrathin, highly uniform epitaxial YBa2Cu3OT. x film, the critical current was depressed and enhanced over 20 % at temperatures close to To, and 5% at lower temperatures. Careful analysis of the electric field dependent I-V characteristics and Arrhenius plots indicate that the electric field effect can be interpreted as a change in the pinning potential and/or the vortex-antivortex interaction potential in the Kosterlitz-Thouless regime, as a result of a change in the carrier density in the superconductor.

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Section: Introductionmentioning

confidence: 91%

Electric field effect on epitaxial YBa2Cu3O7−x thin films

Joosse

Boguslavskij

Gerritsma

et al. 1994

Physica B: Condensed Matter

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“…The influence of an electric field on the transport properties of an ultrathin high temperature superconducting film was investigated by various research groups [I] [2] [3] [4]. The charge carrier density can be modulated by appiying a voltage from a metal gate across a dielectric material to the ultrathin YBa2C~307-6 film.…”

Section: Introductionmentioning

confidence: 99%

Biepitaxial Josephson junctions and SuFET technology for the preparation of HTS-JoFETs

et al. 1994

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Biepitaxial Josephson junctions and superconducting field effect transistors (SuFET) were fabricated in order to combine both techniques to a Josephson junction field effect transistor (JoFET). The Josephson junctions show RSJ-like behaviour. At 30 K a critical current density of J, = lo4 A/cm2 and an LRN-product of 0.1 mV were obtained. The oscillation of Shapiro steps with applied microwave field can be well fitted by the RSJ-model. SuFETs with CeO2 as dielectric show, for fixed charge transfer, results comparable to SrTiO8-based SuFETs. The downset of the resistive transition of a six-unit-cells thick YBa2Cu307-6 layer is 44 K and the largest field effect obtained so far is 1.5 %. Prelimary results on JoFETs show a drastic change in the critical current density and in the specific junction resistance, however the I,RNproduct remains still in the typical range. The insulating properties are degraded compared to SuFETs.

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“…In ref. [ 8 ] also the electrical properties of the different layers were discussed. Here we focus on the uniformity and epitaxial growth of the layers, as investigated with transmission electron microscopy (TEM) and laser scanning microscopy.…”

Section: Microstructure Of the Devicesmentioning

confidence: 99%

“…The fabrication of our PBCO/YBCO/SrTiO3/Au multilayers and device structures has been described previously [ 8 ]. Briefly, the YBCO films, in-situ covered by SrTiO3, were prepared by off-axis magnetron sputtering.…”

Section: Microstructure Of the Devicesmentioning

confidence: 99%

Electric-field effect devices made of YBa2Cu3O7−x/SrTiO3 epitaxial multilayers

Joosse

Boguslavskij

Gerritsma

et al. 1994

Physica C: Superconductivity

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Three terminal superconducting electric-field effect devices, consisting of a bufferlayer of PrBa2Cu307 -x, an ultrathin layer of YBa2CuaOT_x and a SrTiO3 gate isolation layer were fabricated and successfully operated. Transmission electron microscopy and laser scanning microscopy showed that all layers are highly epitaxial and uniform over the device area. This is essentially important in the analysis of the mechanism of the electric field effect and for the reproducible fabrication of devices. With a 5 nm thick YBa2Cu3OT_x layer and an applied electric field of 0.85 MV/cm the critical current was decreased by 5% at low temperatures and up to 36% close to To. Also enhancement was obtained.

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Multilayers for high-Tc superconducting electric field effect devices

Cited by 9 publications

References 4 publications

Electric field effect on epitaxial YBa2Cu3O7−x thin films

Electric field effect on epitaxial YBa2Cu3O7−x thin films

Biepitaxial Josephson junctions and SuFET technology for the preparation of HTS-JoFETs

Electric-field effect devices made of YBa2Cu3O7−x/SrTiO3 epitaxial multilayers

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