Multilevel Charge Storage in a Multiple Alloy Nanodot Memory

Abstract

The initial susceptibility and the average free-energy singularities for a disordered Ising spin system on a Cayley tree have been studied. A set of recursion relations for the probability distribution functions of the effective fields at each generation of the tree is formulated. It is shown that the susceptibility is Curie-like at any temperature, for an equal number of ferromagnetic and antiferromagnetic bonds. The average free energy behaves as hZ"(Tl where his an applied field and 1 C K < CO for 0 C T C T,; the latter is a finite limiting temperature.

Controlled promotion of crystallization for application to multilevel phase-change memory

“…The possibility of MLS was demonstrated in both conventional flash memory and emerging memories in the last decade. [10][11][12][13][14][15][16] Several intermediate resistance levels in phase-change memory (PCM) are available by carefully controlling the phase-transformation of chalcogenide in theory. Distinct and stable intermediate resistance levels, which were obtained by controllable layer-by-layer crystallization or amorphization, were demonstrated by using a multilayer structure.…”

Controllable Crystallization in Phase-Change Memory for Low-Power Multilevel Storage

“…[1][2][3][4][5] To store more information, researchers have focused their attention on multilevel storage (MLS), which is data storage of more than two levels per memory cell. [6][7][8][9] It makes a dramatic increase in memory capacity possible, i.e., much more information can be stored without increasing the cell size.…”