Multilevel interconnections for ULSI and GSI era

Murarka, S. P.

doi:10.1016/s0927-796x(97)00002-8

Cited by 340 publications

(139 citation statements)

References 111 publications

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“…Copper has been identified as the conducting material of choice for a long time for connections in integrated circuits with submicron features. Its low electrical resistivity, high thermal conductivity, high electromigration resistance, excellent chemical and thermodynamic characteristics and low coefficient of resistance [1][2][3] are the key properties in electronic applications. Nanocrystalline copper films acquire potential related to its original physical and chemical characteristics [4,5].…”

Section: Introductionmentioning

confidence: 99%

A comparative study of copper thin films deposited using magnetron sputtering and supercritical fluid deposition techniques

et al. 2017

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:A comparison of crystallinity, microstructure, surface morphology and electrical conductivity is proposed for the deposition of copper films, using supercritical fluid chemical deposition (SFCD) and RF magnetron sputtering techniques. Both preparation methods yield nanocrystalline Cu films (< 100 nm) but SFCD gives access to a higher crystallinity for the same AlN substrate temperature during the deposit. Based on the film characteristics, a comparison of the evolution of electrical properties is done for RF magnetron sputtered copper films and SFCD ones with H2 as reducing agent. Uniform strain values are significantly reduced when SFCD technique is used and crystallinity is highly increased leading to lower resistivity values for a same crystallite size. This study demonstrates the viability of the SFCD technique to produce high quality nanostructured copper thin films with low resistivity values.

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Section: Introductionmentioning

confidence: 99%

A comparative study of copper thin films deposited using magnetron sputtering and supercritical fluid deposition techniques

et al. 2017

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“…Copper, one of the most used interconnect material in silicon-based microelectronics and related devices, has low electrical resistivity and high electromigration resistance. 1,2 It has been reported that high purity Cu films bind well to the silica substrates if there are no hydroxyl groups at the Cu/SiO 2 interface. 3,4 A major issue, however, is the interaction between Cu and SiO 2 at the interface; this interaction can lead to the formation of oxidized Cu leading to the diffusion of Cu ions through the SiO 2 layer, which results in the degradation of the dielectric layer.…”

Section: Introductionmentioning

confidence: 99%

Molecular dynamics study of the adhesion of Cu/SiO2interfaces using a variable-charge interatomic potential

et al. 2011

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The structural, adhesive, and electronic properties of Cu/α-cristobalite SiO 2 interfaces with various interface terminations are investigated with molecular dynamics simulations using the charge-optimized many body (COMB) potential. We predict that the Cu/α-cristobalite interface exhibits the largest adhesion energy for the oxygen-richest condition.The trend of the adhesion energies is consistent with that determined from DFT calculations. We also investigate the properties of Cu/α-quartz SiO 2 interfaces with different terminations, and show that the trend of adhesion energies is analogous to that of Cu/α-cristobalite interfaces. The adhesion energies of Cu/amorphous SiO 2 interfaces with different oxygen defect densities are also investigated, and the predicted adhesion energies are compared to experimental values. In particular, it is found that the adhesion energies decrease as the number of oxygen vacancies increases. The calculated charge differences across the interfaces with COMB are also consistent with the DFT electron density difference analysis. These results demonstrate the ability of the empirical, variable charge COMB potential to capture the key physical aspects of heterogeneous interfaces, including predicting that the adhesion of Cu/SiO 2 interfaces increases with interfacial oxygen densities.

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“…):30 % H 2 O 2 (3:l, v/v) for 10 min at ∼100°C, and etched in 2 % HF for 4 min; and sequentially in 30 % NH 3 .H 2 O:30 % H 2 O 2 :H 2 O (1:l:5, v/v) for 15 min to generate a thin silicon dioxide on the surface of the silicon substrate [20], and finally in H 2 SO 4 (conc. ):30 % H 2 O 2 (3:l, v/v) for 30 min.…”

Section: Preparation Of Substrate Si(100)mentioning

confidence: 99%

“…[1,2] However, a diffusion barrier/adhesion promoter is required to prevent copper diffusion into Si or SiO 2 , and enhance the adhesion of copper to SiO 2 or various low-j materials. [3] As feature sizes decrease to below 100 nm, traditional interfacial barrier layers such as Ti/TiN and Ta/TaN are no longer suitable because they do not provide adequate performance as thicknesses reduce to 20 nm or less in order to maximize the space available for a copper conductor. [4] Recently, Ramanath et al [5,6] demonstrated the use of near-zero thickness (<2 nm thick) self-assembled molecular monolayers (SAMs) as candidates for ultrathin barrier layers to prevent Cu diffusion into SiO 2 -based dielectrics.…”

Section: Introductionmentioning

confidence: 99%

Characterization of Chemical Vapor Deposited Copper Films on Mercaptan Self-Assembled Monolayer Diffusion Barriers

Liu

Wang

2006

Chem. Vap. Deposition

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Copper thin films are produced by CVD using the precursor Cu II bis-hexafluoroacetylacetonate [Cu II (hfac) 2 ], on the self-assembled monolayers of a 3-mercaptopropyltrimethoxysilane (MPTMS) modified substrate. The microstructures of the deposited copper films are characterized by various surface analysis techniques, such as scanning electron microscopy (SEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). The film resistivity was also measured using the fourprobe method. The results of the measurements indicate that the microstructures of copper thin film are strongly dependent on the substrate temperature during film deposition. The copper thin films deposited have a resistivity as low as 2.1 lX cm in the temperature range 290-350°C. These results indicate that the CVD of copper film on a mercaptan SAM diffusion barrier is a potential technique for copper multilevel metallization.

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Multilevel interconnections for ULSI and GSI era

Cited by 340 publications

References 111 publications

A comparative study of copper thin films deposited using magnetron sputtering and supercritical fluid deposition techniques

A comparative study of copper thin films deposited using magnetron sputtering and supercritical fluid deposition techniques

Molecular dynamics study of the adhesion of Cu/SiO2interfaces using a variable-charge interatomic potential

Characterization of Chemical Vapor Deposited Copper Films on Mercaptan Self-Assembled Monolayer Diffusion Barriers

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