Multilevel Resistive Switching Memory Based on a CH3NH3PbI 3−xClx Film with Potassium Chloride Additives

Lv, Fengzhen; Lee, Kang; Zhong, Tingting; Liu, Fuchi; Liang, Xiaoguang; Zhu, Canhong; Li, Jun; Kong, Wenjie

doi:10.1186/s11671-020-03356-3

Cited by 10 publications

(14 citation statements)

References 39 publications

(45 reference statements)

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“…Hence, an alternative conduction mechanism with nonexponential voltage dependence is required. Such a characteristic is found in the space-charge limited current (SCLC) model, which is frequently used to explain the transport in VCM cells. ,,− …”

Section: Analysis Of the Conduction Mechanismmentioning

confidence: 99%

“…To verify this type of conduction, the I–V dependence is measured and plotted on a double logarithmic scale, which allows determination of the power law I ∝ V α by a linear regression. ,,− An example from the work of Maikap of this approach is shown in Figure for a W/TaO x /TiN cell. The slopes α determined in resistive switching devices differ strongly, and the values in the referenced literature are found between 0.8 and 21. , …”

Section: Analysis Of the Conduction Mechanismmentioning

confidence: 99%

“…Another problem is the fitting in different voltage ranges, especially as the fit is often applied to a dynamic voltage range close to the SET and RESET. ,,,,, In this range, the oxygen vacancies migrate and change the conduction. Thus, it is meaningless to consider the electronic transport without taking this into account.…”

Section: Analysis Of the Conduction Mechanismmentioning

confidence: 99%

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Comprehensive Model of Electron Conduction in Oxide-Based Memristive Devices

Funck

Menzel

2021

ACS Appl. Electron. Mater.

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Memristive devices are two-terminal devices that can change their resistance state upon application of appropriate voltage stimuli. The resistance can be tuned over a wide resistance range enabling applications such as multibit data storage or analog computing-in-memory concepts. One of the most promising classes of memristive devices is based on the valence change mechanism in oxide-based devices. In these devices, a configurational change of oxygen defects, i.e. oxygen vacancies, leads to the change of the device resistance. A microscopic understanding of the conduction is necessary in order to design memristive devices with specific resistance properties. In this paper, we discuss the conduction mechanism proposed in the literature and propose a comprehensive, microscopic model of the conduction mechanism in this class of devices. To develop this microscopic picture of the conduction, ab initio simulation models are developed. These simulations suggest two different types of conduction, which are both limited by a tunneling through the Schottky barrier at the metal electrode contact. The difference between the two conduction mechanisms is the following: for the first type, the electrons tunnel into the conduction band and, in the second type, into the vacancy defect states. These two types of conduction differ in their current voltage relation, which has been detected experimentally. The origin of the resistive switching is identical for the two types of conduction and is based on a modification of the tunneling distance due to the oxygen vacancy induced screening of the Schottky barrier. This understanding may help to design optimized devices in terms of the dynamic resistance range for specific applications.

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Section: Analysis Of the Conduction Mechanismmentioning

confidence: 99%

Section: Analysis Of the Conduction Mechanismmentioning

confidence: 99%

Section: Analysis Of the Conduction Mechanismmentioning

confidence: 99%

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Comprehensive Model of Electron Conduction in Oxide-Based Memristive Devices

Funck

Menzel

2021

ACS Appl. Electron. Mater.

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“…With the development of modern electronic technology and further miniaturization of silicon semiconductor devices, new memory technologies have been vigorously developed [5][6][7][8]. Among these, resistive random access memory (RRAM) is considered the best candidate to replace traditional flash memory technology [9][10][11][12][13][14][15]. Two-dimensional (2D) nanocomposite has realized more than one breakthroughs in material and device issues due to their unique structure stability and functionality [16][17][18][19][20][21][22][23].…”

Section: Introductionmentioning

confidence: 99%

Influence of adsorption small molecules atrazine on nonvolatile resistive switching behavior in Co–Al layered double hydroxide films

Sun

Shi

2021

J Mater Sci: Mater Electron

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Co-Al layered double hydroxides (LDHs) thin films were prepared by drop-casting process on ITO coated glass substrates. And then the small molecule atrazine was adsorbed on the Co-Al LDHs film by impregnation method. Current-voltage characteristics revealed nonvolatile resistive switching in Co-Al LDHs adsorbed atrazine films. The Influence of adsorption small molecules atrazine on nonvolatile resistive switching behavior in Co-Al LDHs Film has been investigated. By varying the atrazine adsorbed content in Co-Al LDHs thin films, the nonvolatile resistive switching behavior of device could be adjusted in a controlled way. Entirely different nonvolatile resistive switching characteristic, such as write-once read-many-times memory effect and rewritable memory effect are discriminable by the current-voltage curves.

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“…Among these, resistive random access memory (RRAM) is considered the best candidate to replace traditional flash memory technology [9][10][11][12][13][14][15].…”

Section: Introductionmentioning

confidence: 99%