Multilevel resistive switching memory in lead-free double perovskite La$$_{2}$$NiFeO$$_{6}$$ films
Yongfu Qin,
Yuan Gao,
Fengzhen Lv
et al.
Abstract:Dense and flat La$$_{2}$$
2
NiFeO$$_{6}$$
6
(LNFO) films were fabricated on the indium tin oxide-coated glass (ITO/glass) substrate by sol–gel method. The bipolar resistive switching behavior (BRS) could be maintained in 100 cycles and remained after 30 days, indicating that the LNFO-based RS device owned good memory stabi… Show more
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