Multimode AFM analysis of aluminum-doped zinc oxide thin films sputtered under various substrate temperatures for optoelectronic applications

Kalvani, Payam Rajabi; Jahangiri, Alireza; Shapouri, Samaneh; Sari, A. H.; Jalili, Yousef Seyed

doi:10.1016/j.spmi.2019.106173

Cited by 18 publications

(4 citation statements)

References 102 publications

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“…The bandgap of the ZnO nanorods was obtained from the Tauc equation, 73 αhν = A(hν − E g ) m , where α is the absorption coefficient, hν represents the photon energy, A is a constant, E g is the bandgap, and m is 1 2 for direct electron transition in semiconductors. By fitting a line to (αhν) 2 as a function of hν, the energy bandgap of the ZnO nanorods was obtained.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

High-Voltage, High-Current Electrical Switching Discharge Synthesis of ZnO Nanorods: A New Method toward Rapid and Highly Tunable Synthesis of Oxide Semiconductors in Open Air and Water for Optoelectronic Applications

Malvajerdi

Abrari

Karimi

et al. 2021

ACS Appl. Mater. Interfaces

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A novel method of oxide semiconductor nanoparticle synthesis is proposed based on high-voltage, high-current electrical switching discharge (HVHC-ESD). Through a subsecond discharge in the HVHC-ESD method, we successfully synthesized zinc oxide (ZnO) nanorods. Crystallography and optical and electrical analyses approve the high crystal-quality and outstanding optoelectronic characteristics of our synthesized ZnO. The HVHC-ESD method enables the synthesis of ZnO nanorods with ultraviolet (UV) and visible emissions. To demonstrate the effectiveness of our prepared materials, we also fabricated two UV photodetectors based on the ZnO nanorods synthesized using the subsecond HVHC-ESD method. The UV-photodetector test under dark and UV light irradiation also had a promising result with a linear ohmic current−voltage output. In addition to the HVHC-ESD method's excellent tunability for ZnO properties, this method enables the rapid synthesis of ZnO nanorods in open air and water. The results demonstrate the preparation, highlight the synthesis of fine hexagonal-shaped nanorods under a second with controlled oxygen vacancies, and point defects for a wide range of applications in less than a second.

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Section: ■ Results and Discussionmentioning

confidence: 99%

High-Voltage, High-Current Electrical Switching Discharge Synthesis of ZnO Nanorods: A New Method toward Rapid and Highly Tunable Synthesis of Oxide Semiconductors in Open Air and Water for Optoelectronic Applications

Malvajerdi

Abrari

Karimi

et al. 2021

ACS Appl. Mater. Interfaces

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“…5 × 10 14 ion cm −2 , 8 × 10 14 ion cm −2 and 1 × 10 15 ion cm −2 average transmittance in the visible region was observed to be greater than the pristine substrates and found to be nearly 89.50%, 90.10%, and 91.2% respectively. According to Burstein-Moss theory, this increment in transmittance may be attributed due to change in carrier concentration at higher fluence, as is also observed by Hall measurements [42]. The other possible reason for the variation in transmittance may be due to the change in crystallites size, enhancement in oxygen concentration and/or the type of defects offered by the ion irradiation [19].…”

Section: Effects Of Ion Irradiation On Fto Substratesmentioning

confidence: 60%

“…Thus it can be inferred that ion irradiation leads to the simultaneous increase in the value of ρ as well as R s with increasing ion fluence. The possible reason of the increase in ρ and R s may be due to the formation of ion induced defects, grain boundary, surface roughness, and various other defects that scatter the carriers [10,42].…”

Section: Effects Of Ion Irradiation On Fto Substratesmentioning

confidence: 99%

Effects of 10 MeV Al⁴⁺ ions irradiation on fluorine-doped tin oxide substrates for photovoltaic device applications

Pandey¹,

Patel²,

Chaudhary³

et al. 2021

J. Phys. D: Appl. Phys.

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The effects of 10 MeV Al4+ ions irradiation on structural, surface morphological, optical and electrical properties of fluorine-doped tin oxide (FTO) substrates are presented for solar cell applications. The ions irradiation changes the surface morphology, average roughness, interface width, roughness exponent, and several other fractal parameters of the FTO surfaces. The UV–visible transmittance measurement shows an enhancement of transmittance in the ions irradiated substrates up to 95%. The electrical properties such as mobility, work-function, sheet resistance, and resistivity are also modified due to ions irradiation. In order to have functional applications of these ions irradiated substrates, we fabricated organic solar cells on these ions irradiated and pristine FTO substrates. The device performances are significantly improved for the case of ions irradiated FTO substrate in comparison to the pristine one. Thus, better device performance due to effective changes in physical properties suggests that the ions irradiated FTO substrates can be used as better electrodes for organic and hybrid photovoltaic device applications.

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“…[9,[15][16][17] The resistivity of aluminum-doped zinc oxide (AZO) in the order of 10 À4 Ω cm, together with its transparency of more than 90%, as well as nontoxicity, biocompatibility, availability of precursors, stability, and roll-to-roll production capability, have made it as the best alternative for ITO. [18,19] To prepare AZO thin films, a variety of deposition techniques have been used ranging from solution-based methods to vacuum-based deposition processes. Although magnetron sputtering is considered as the most convenient preparation method of AZO thin films, the industrial production is greatly limited with expensive vacuum deposition approaches, leading to an interest in solution-based AZO thin films.…”

Section: Introductionmentioning

confidence: 99%

Effects of Thallium–Aluminum‐Codoped Zinc Oxide Thin Film as a New Transparent Conducting Oxide

Zamani-Meymian

Mousavi

Rabbani

et al. 2021

Physica Status Solidi (a)

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Herein, the electro–optical properties of sol–gel spin‐coated “thallium–aluminum‐codoped zinc oxide (TAZO)” focusing on the effects of thallium are investigated. It is shown that the amount of thallium (Tl) has a significant effect on improving the electrical properties of TAZO as a new transparent conducting oxide (TCO). The optimum results are achieved by adding 1 at% of Tl to aluminum‐doped zinc oxide (AZO), after which the sheet resistance (Rs) value is reduced from 30.21 to 2.832 KΩ sq−1. Although less Rs is recorded in all amounts of Tl used (from 1 to 4 at%) than in Tl‐free samples, Rs also increases as the amount of Tl increases, which is related to the degradation of the crystal structure at higher values of Tl. In view of a trade‐off between electrical conductivity and optical transparency, a decrease in transparency in the presence of Tl is a predictable issue, but while the Tl‐free samples record 90% transparency, the uniform thin film of 1 at% Tl‐AZO is able to achieve 85% transparency. This small amount of reduction in transparency shows the high potential of Tl to improve the properties of AZO as a TCO.

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Multimode AFM analysis of aluminum-doped zinc oxide thin films sputtered under various substrate temperatures for optoelectronic applications

Cited by 18 publications

References 102 publications

High-Voltage, High-Current Electrical Switching Discharge Synthesis of ZnO Nanorods: A New Method toward Rapid and Highly Tunable Synthesis of Oxide Semiconductors in Open Air and Water for Optoelectronic Applications

High-Voltage, High-Current Electrical Switching Discharge Synthesis of ZnO Nanorods: A New Method toward Rapid and Highly Tunable Synthesis of Oxide Semiconductors in Open Air and Water for Optoelectronic Applications

Effects of 10 MeV Al⁴⁺ ions irradiation on fluorine-doped tin oxide substrates for photovoltaic device applications

Effects of Thallium–Aluminum‐Codoped Zinc Oxide Thin Film as a New Transparent Conducting Oxide

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Multimode AFM analysis of aluminum-doped zinc oxide thin films sputtered under various substrate temperatures for optoelectronic applications

Cited by 18 publications

References 102 publications

High-Voltage, High-Current Electrical Switching Discharge Synthesis of ZnO Nanorods: A New Method toward Rapid and Highly Tunable Synthesis of Oxide Semiconductors in Open Air and Water for Optoelectronic Applications

High-Voltage, High-Current Electrical Switching Discharge Synthesis of ZnO Nanorods: A New Method toward Rapid and Highly Tunable Synthesis of Oxide Semiconductors in Open Air and Water for Optoelectronic Applications

Effects of 10 MeV Al4+ ions irradiation on fluorine-doped tin oxide substrates for photovoltaic device applications

Effects of Thallium–Aluminum‐Codoped Zinc Oxide Thin Film as a New Transparent Conducting Oxide

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Effects of 10 MeV Al⁴⁺ ions irradiation on fluorine-doped tin oxide substrates for photovoltaic device applications