“…CMOS APS with 21 x 21 µm 2 Al electrodes with optional Aucoating (electroless deposition) (Imfeld et al, 2007; Multiparametric sensor with 6 µm 2 CPFET and Ø 10 µm Pd or Pt electrodes, ISFET pH electrode, interdigitated impedance electrodes, photodiodes, oxygen and T sensor (Baumann et al, 1999;Ehret et al, 2001;Baumann et al, 2002) (Cunningham et al, 2001;Mathieson et al, 2004) 61 R,S (3D) Hexagonally arranged, ≤ 200 µm high, partially hollow W needles with electroplated Pt-tips, insulated by SiO 2 and back-side connected to Al tracks, wire-bonded to ASIC readout & stimulation circuitry (Gunning et al, 2010) Table 1. List of groups and companies that have developed a particular MEA technology 6 sorted by first publication date, then author.…”