Multiphoton Absorption in Gallium Nitride and Silicon Carbide Photodiodes: Applications for Single-Event Effects Tests

Bourgine, A.; Lagarde, David; Dubos, S.; Guillermin, J.; Chatry, N.; Chatry, C.; Mauguet, M.; Marie, X.

doi:10.1109/tns.2023.3277579

Cited by 6 publications

(2 citation statements)

References 32 publications

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“…It is a potential candidate to displace silicon (Si) in high-power and highfrequency applications. 13,14 Similarly, SiC has useful nonlinear optical properties, 15,16 such as harmonic generation, phase modulation, four-wave mixing, and multiphoton absorption (MPA), 17,18 which are crucial for optoelectronic devices. 19,20 MPA is fundamental to understanding wide bandgap material-based devices' ultrafast intrinsic processes.…”

Section: Introductionmentioning

confidence: 99%

“…In this category, silicon carbide (SiC) is a comparatively new but promising candidate due to its physical and optical properties. ,, Optically, it provides a wide transparent window, high refractive index, and nonlinearities, while physically it has high thermal conductivity, electron saturation velocity, and breakdown electric field. It is a potential candidate to displace silicon (Si) in high-power and high-frequency applications. , Similarly, SiC has useful nonlinear optical properties, , such as harmonic generation, phase modulation, four-wave mixing, and multiphoton absorption (MPA), , which are crucial for optoelectronic devices. , …”

Section: Introductionmentioning

confidence: 99%

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Probing Silicon Carbide with Phase-Modulated Femtosecond Laser Pulses: Insights into Multiphoton Photocurrent

Ali,

Wang,

Cai

et al. 2024

ACS Photonics

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Wide-bandgap semiconductors are widely used in photonic technologies due to their advantageous features, such as large optical bandgap, low losses, and fast operational speeds. Silicon carbide (SiC) is a prototypical wide bandgap semiconductor with high optical nonlinearities, large electron transport, and a high breakdown threshold. Integration of SiC in nonlinear photonics requires a systematic analysis of the multiphoton contribution to device functionality. Here, the multiphoton photocurrent in a SiC photodetector is investigated using phase-modulated femtosecond pulses. Multiphoton absorption is quantified using a 1030 nm phase-modulated pulsed laser. Our measurements show that although the bandgap is less than the energy of three photons, only four-photon absorption has a significant contribution to the photocurrent. We interpret the four-photon absorption as a direct transition from the valence band to the conduction band at the Γ point. More importantly, SiC withstands higher excitation intensities compared to other wide bandgap semiconductors, making it an ideal system for high-power nonlinear applications.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Probing Silicon Carbide with Phase-Modulated Femtosecond Laser Pulses: Insights into Multiphoton Photocurrent

Ali,

Wang,

Cai

et al. 2024

ACS Photonics

View full text Add to dashboard Cite

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Effects of impurity band on multiphoton photocurrent in GaN and InGaN photodetectors

Wang,

Ali,

et al. 2024

Optical Materials

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Multiphoton photocurrent in wide bandgap semiconductors for nonlinear optoelectronics: Comparison of GaP, GaN/InGaN, and SiC

Wang,

Ali,

Karki

2024

Applied Physics Letters

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Wide bandgap semiconductors are ideally suited for nonlinear optoelectronics. Because their bandgaps are larger than 2 eV, simultaneous absorption of two or more near-infrared photons is necessary to excite the electrons from the valence to the conduction band. Understanding of the processes that affect multiphoton absorption is important in the design and fabrication of optoelectronic devices. Here, we present an overview of the photocurrent response in photodetectors made from GaP, GaN, InGaN, and SiC when they are excited by photons at 1.2 eV. Recent measurements have shown that sub-bandgap absorptions contribute to photocurrent in GaP, and, thus, it is not a good material for nonlinear optoelectronics. Similarly, the response of GaN is affected by long-lived trapped charges. Photocurrents in InGaN and SiC are predominantly from three- and four-photon absorption, respectively. Moreover, these materials can withstand excitation intensities higher than 1011 W cm−2, making them appropriate platforms for nonlinear optoelectronics.

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Multiphoton Absorption in Gallium Nitride and Silicon Carbide Photodiodes: Applications for Single-Event Effects Tests

Cited by 6 publications

References 32 publications

Probing Silicon Carbide with Phase-Modulated Femtosecond Laser Pulses: Insights into Multiphoton Photocurrent

Probing Silicon Carbide with Phase-Modulated Femtosecond Laser Pulses: Insights into Multiphoton Photocurrent

Effects of impurity band on multiphoton photocurrent in GaN and InGaN photodetectors

Multiphoton photocurrent in wide bandgap semiconductors for nonlinear optoelectronics: Comparison of GaP, GaN/InGaN, and SiC

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