Multiphoton Ionization in Dielectrics: Comparison of Circular and Linear Polarization

Temnov, Vasily V.; Sokolowski‐Tinten, K.; Zhou, Ping; El-Khamhawy, A.; Linde, D. von der

doi:10.1103/physrevlett.97.237403

Cited by 193 publications

(151 citation statements)

References 18 publications

Supporting

Mentioning

132

Contrasting

Unclassified

Order By: Relevance

“…Its slope is determined by the FEL and probe laser pulse durations. The ultrafast relaxation of the electron density within 150 fs, which has been observed by other groups using fused silica 43,44 , could not be observed. In our experiment, the transmission kept a constant value even for a delay of a few picoseconds.…”

Section: Resultsmentioning

confidence: 74%

Single-shot pulse duration monitor for extreme ultraviolet and X-ray free-electron lasers

et al. 2013

Self Cite

View full text Add to dashboard Cite

The resolution of ultrafast studies performed at extreme ultraviolet and X-ray free-electron lasers is still limited by shot-to-shot variations of the temporal pulse characteristics. Here we show a versatile single-shot temporal diagnostic tool that allows the determination of the extreme ultraviolet pulse duration and the relative arrival time with respect to an external pump-probe laser pulse. This method is based on time-resolved optical probing of the transient reflectivity change due to linear absorption of the extreme ultraviolet pulse within a solid material. In this work, we present measurements performed at the FLASH free-electron laser. We determine the pulse duration at two distinct wavelengths, yielding (184 ± 14) fs at 41.5 nm and (21 ± 19) fs at 5.5 nm. Furthermore, we demonstrate the feasibility to operate the tool as an online diagnostic by using a 20-nm-thin Si 3 N 4 membrane as target. Our results are supported by detailed numerical and analytical investigations.

show abstract

Section: Resultsmentioning

confidence: 74%

Single-shot pulse duration monitor for extreme ultraviolet and X-ray free-electron lasers

et al. 2013

Self Cite

View full text Add to dashboard Cite

show abstract

“…However, playing with the pulse duration in order to clarify the role of avalanche ionization, we have found no evidence of avalanche in previous work, 12 and these results have been confirmed be more recent experiments. 13 In principle we could try to use our plasma measurements' dependence with the laser intensity to distinguish between the two ionization mechanisms. However, we would like to point out that the experimentally determined carrier densities are only correct under the assumption of a homogeneous excitation profile inside the sample (along the propagation direction).…”

Section: Saturation Effectmentioning

confidence: 99%

“…Specifically, for 800-nm infrared (IR) laser and pure silica glass it needs 5-6 photons. 12,13 In such a case, multiphoton ionization (MPI) leads to free electron. Another process that leads to band-to-band transition is tunneling ionization produced by the distortion of the band structure under the electromagnetic field.…”

Section: Introductionmentioning

confidence: 99%

Time-resolved plasma measurements in Ge-doped silica exposed to infrared femtosecond laser

et al. 2011

View full text Add to dashboard Cite

Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers)Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication Citation for published version (APA):Lancry, M., Groothoff, N., Poumellec, B., Guizard, S., Fedorov, N., & Canning, J. (2011). Time-resolved plasma measurements in Ge-doped silica exposed to infrared femtosecond laser. Physical Review B: Condensed Matter, 84(24), 245103-1/8. DOI: 10.1103/PhysRevB.84.245103 General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. Using a time-resolved interferometric technique, we study the laser-induced carrier-trapping dynamics in SiO 2 and Ge-doped SiO 2 . The fast trapping of electrons in the band gap is associated with the formation of self-trapped excitons (STE). The STE trapping is doping dependent in SiO 2 . The mean trapping time of electrons excited in the conduction band was found to be significantly lower in Ge-doped silica (75 ± 5 fs) when compared to pure silica (155 ± 5 fs). At our concentration level, this indicates that the plasma properties are determined by the presence of easily ionizable states such as the presence of Ge atoms in the glass network. Therefore, we suggest that in Ge-doped silica there exist an additional trapping pathway that leads to a significantly faster excitons trapping and a higher plasma density when compared to undoped silica.

show abstract

“…When limited to one interferogram, the phase information has to be determined by the fringe position and shape. A 2D Fourier-transform approach [6] can not be used to reconstruct the phase in this case though, because it is only applicable for radiation with large coherence lengths since a large number of fringe orders is needed for the evaluation.…”

Section: Interferogram Analysismentioning

confidence: 99%

“…Phase detection by phase contrast [5] or monochromatic interferometry [6] with ultra short laser pulses is sporadically used in research. For time-resolved applications it has many shortcomings such as failing in the distinct determination of optical path differences larger than λ/2.…”

Section: Introductionmentioning

confidence: 99%

Development of a time-resolved white-light interference microscope for optical phase measurements during fs-laser material processing

et al. 2010

View full text Add to dashboard Cite

A modified Mach-Zehnder interferometer set-up combined with microscope objectives has been developed for the measurement of phase changes in the processed material sample, like modification and melting of glass. The white light is generated by focusing ultrafast laser radiation (t p = 80 fs) in a sapphire crystal using a micro-lens array to minimize temporal and spatial fluctuations in the whitelight continuum. Lateral and coaxial pump-probe measurements of the phase changes during material processing are performed using two coupled ultrafast laser sources at different repetition rates (f rep = 1 Hz-1 MHz). The optical phase shift and therefore the refractive index of the material are calculated from the interference images using two approaches. The knowledge of the refractive index during the laser processing with a temporal resolution in the ps-range and a spatial resolution of several microns leads to a better understanding of the initial processes for the permanent material modifications.

show abstract

Multiphoton Ionization in Dielectrics: Comparison of Circular and Linear Polarization

Cited by 193 publications

References 18 publications

Single-shot pulse duration monitor for extreme ultraviolet and X-ray free-electron lasers

Single-shot pulse duration monitor for extreme ultraviolet and X-ray free-electron lasers

Time-resolved plasma measurements in Ge-doped silica exposed to infrared femtosecond laser

Development of a time-resolved white-light interference microscope for optical phase measurements during fs-laser material processing

Contact Info

Product

Resources

About