Multiphoton photoluminescence from GaN with tunable picosecond pulses

Kim, Doseok; Libon, I. H.; Voelkmann, C.; Shen, Y. R.; Petrova‐Koch, V.

doi:10.1103/physrevb.55.r4907

Cited by 40 publications

(35 citation statements)

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“…[12][13][14][15] Kim et al reported multiphotoninduced PL in the YL band and found that the multiphoton PL excitation ͑PLE͒ spectrum exhibits resonance that is attributable to the mid-gap defect states. 6 Sun et al obtained a large two-photon absorption ͑TPA͒ coefficient below the band gap and demonstrated two-photon-induced YL imaging. 3 However, the nonlinear optical properties in the YL band including the TPA coefficients remain largely unclear.…”

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confidence: 99%

“…1 Recently, the optical nonlinearities of these materials have attracted increased interest as factors for determining device performance. [2][3][4][5][6][7][8][9][10][11] In addition to the technological importance, these nonlinear absorption studies also provide important insights into the fundamental physics of materials, such as band structures, 6 relaxation processes, [7][8][9][10] and electron-phonon interactions. 11 One characteristic of GaN observed in photoluminescence ͑PL͒ spectra is yellow luminescence ͑YL͒.…”

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Two-photon absorption and multiphoton-induced photoluminescence of bulk GaN excited below the middle of the band gap

Toda

Matsubara

Morita

et al. 2003

Applied Physics Letters

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Optical nonlinearity in the yellow luminescence (YL) band of GaN was investigated using thick bulk samples. Transient pump–probe measurements revealed strong transmission changes due to two-photon absorption(TPA) even at the middle of the YL band. The TPA coefficient evaluated reaches ∼5 cm/GW∼5 cm/GW at about 1.3 eV, which was as large as the mid-gap resonance. The TPA spectrum clearly showed that the observed large nonlinearity originated from the YL band. On the basis of efficient TPA in the YL band, relaxation processes in the multiphoton-induced photoluminescence excitation spectrum were also investigated

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confidence: 99%

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confidence: 99%

Two-photon absorption and multiphoton-induced photoluminescence of bulk GaN excited below the middle of the band gap

Toda

Matsubara

Morita

et al. 2003

Applied Physics Letters

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“…Pour rendre compte du comportement observé nous devons considérer, outre les états de bandes et les niveaux des états pièges responsables de la luminescence jaune, des niveaux d'impuretés dont plusieurs travaux ont montré l'existence [5]. Ces niveaux correspondraient à des centres profonds, situés 1 eV au-dessus de la bande de valence et seraient dus à des impuretés (oxygène ou carbone) ou à des défauts structuraux [6] À faible intensité, la solution du système (1) pour la densité de porteurs de la bande de conduction ne est une double exponentielle, ce qui est en accord avec l'expérience.…”

Section: Résultats Et Discussionunclassified

Influence de la saturation des niveaux d'impuretés sur la dynamique de la luminescence de couches épitaxiées de nitrure de gallium

Haag

Hönerlage

Gilliot

et al. 1998

l'Optique Non Linéaire Et Ses Matériaux

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Résumé : Nous avons étudié la dynamique de la luminescence de couches épitaxiées de nitrure de gallium sur substrat de saphir. Sous fortes intensités d'excitation, nous observons une augmentation du temps de recombinaison de la luminescence jaune. Ces résultats s'interprètent à l'aide de niveaux d'impuretés situés 1 eV au-dessus de la bande de valence, jouant un rôle de réservoir saturable.

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“…So far, several research groups have obtained two-photon and multiple-photon related optical nonlinearities connected with the YL band. For example, Kim et al have reported multiphoton induced photoluminescence (PL) in the YL band, and found that the multiphoton PL excitation (PLE) spectrum exhibits resonances attributable to midgap defect states [1]. Sun et al have obtained a large two-photon absorption (TPA) coefficient below the bandgap, and demonstrated two-photon induced YL imaging [2].…”

mentioning

confidence: 97%

“…Sun et al have obtained a large two-photon absorption (TPA) coefficient below the bandgap, and demonstrated two-photon induced YL imaging [2]. In addition to the study of defect states, these nonlinear absorption studies also provide important insights into the fundamental physics of materials, such as band structures [1], relaxation processes [3][4][5][6], and electron-phonon interactions [7]. However, the role of the YL band in these optical nonlinearities remains largely unclear.…”

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confidence: 99%

Efficient two‐photon absorption of bulk GaN in the near‐infrared region

Toda

Matsubara

Morita

et al. 2003

phys. stat. sol. (c)

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Transient transmission changes in the yellow luminescence (YL) band of GaN were investigated using excitation far smaller than the bandgap. At lower excitation power, time-resolved measurements revealed efficient transmission changes due to two-photon absorption (TPA), whose spectrum clearly indicates the contribution of the YL band. Upon increasing the excitation power, the transient signal showed an additional offset signal. The excitation power dependences of the offset suggested a two-step absorption process in conjunction with TPA in the YL band. The excitation energy dependence also supported this conclusion.The study of defect states in GaN films is important for understanding the device physics because even a device grade sample involves a high density of defects. One optical characteristic concerning the defect states is the so-called "yellow luminescence" (YL). So far, several research groups have obtained two-photon and multiple-photon related optical nonlinearities connected with the YL band. . In addition to the study of defect states, these nonlinear absorption studies also provide important insights into the fundamental physics of materials, such as band structures [1], relaxation processes [3-6], and electron-phonon interactions [7]. However, the role of the YL band in these optical nonlinearities remains largely unclear.In this paper, we investigate TPA in the YL band. Transient pump-probe measurements in the nearinfrared (NIR) excitation reveal efficient transmission changes, despite the lack of a bandgap transition. The TPA spectrum clearly shows that the observed large nonlinearity originates from the YL band. In addition, transmission changes at higher excitation power show an additional asymmetrical offset signal. The offset also reflects the characteristic of efficient TPA in the YL band.The sample studied was a freestanding bulk GaN sample with a thickness of $420 mm. The absence of a substrate allows the nonlinear response to be evaluated precisely. The electron concentration in the sample was estimated to be $ 10 19 cm À3 . A mode-locked Ti : sapphire laser (pulse width $100 fs, repetition rate 76 MHz) was employed as an NIR excitation light source. The tunable wavelength of the laser was 1.25 to 1.77 eV, which covers the excitation of carriers from the middle of the YL band to the middle of the energy gap (E G /2) into the conduction band. Linearly polarized pump

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Multiphoton photoluminescence from GaN with tunable picosecond pulses

Cited by 40 publications

References 0 publications

Two-photon absorption and multiphoton-induced photoluminescence of bulk GaN excited below the middle of the band gap

Two-photon absorption and multiphoton-induced photoluminescence of bulk GaN excited below the middle of the band gap

Influence de la saturation des niveaux d'impuretés sur la dynamique de la luminescence de couches épitaxiées de nitrure de gallium

Efficient two‐photon absorption of bulk GaN in the near‐infrared region

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