The additives co-injection test is shown to provide important and unique insight into the bottom-up plating process. The observed transient peak polarization depends on the convective flow and reflects the electrode coverage by both the suppressor and the anti-suppressor species, much like the electrode coverage during the actual bottom-up plating process. A computer implemented analytical model of the co-injection test is presented. This model, which accounts for the additives transport through the flow-induced boundary layer and their adsorption kinetics, characterizes the actual wafer plating process more comprehensively than previous models, linking for the first time the wafer rotation rate to the process effectiveness. Correlating the model to experimental data provides the values of process parameters, including additives adsorption rates and their displacement constants, which heretofore were not accessible. It is found that previously reported values of diffusivities, saturated surface coverages, and the SPS adsorption rate constant are consistent with the presented co-injection model, however, values for the rate constants of PEG adsorption (k PEG ) and PEG displacement by SPS (k SPS,PEG ), which previously have only been inaccurately estimated, are now correctly quantified. The interconnects, which provide the intrinsic electrical wiring network in semiconductor devices, are fabricated by electroplating copper within vias and trenches, from electrolytes containing special additives. The latter control the plating rates such that the plating from the bottom of the features is enhanced, while plating on the sidewalls and the top wafer surface is inhibited.1 The variable plating rate is achieved by the additives distribution on the plated surface: additives which suppress plating, e.g., polyethers, adsorb preferentially on the wafer top surface and the rims of the features, while additives that block the adsorption of the suppressor, the so called 'anti-suppressors', predominantly accumulate at the features bottom, preventing suppressor adsorption at those locations and thus maintaining fast plating from the bottom. The interaction between these additives is imperative for achieving void-free bottom-up fill. Electrolytes containing common additives, polyethylene glycol [PEG] as suppressor and bis(3-sulfopropyl) disulfide [SPS] as anti-suppressor, have been studied extensively 1-28 and models have been developed to explain and characterize the bottom-up fill process. [5][6][7][8][9][10][11][12][13] Modeling and optimization of the interconnect metallization process requires the application of numerous process parameters, including the diffusion coefficients of the suppressor and the anti-suppressor, their surface adsorption rates, and their competitive interaction. The determination of many of these parameters is difficult and consequently their values had often only been estimated.11-13 Electrochemical tests such as the sequential injection technique have been used to provide adsorption constants with li...