Multiple electron beam maskless lithography for high-volume manufacturing

Chen, Jack J. H.; Lin, Shy-Jay; Fang, Tz-ying; Chang, Shu-Hao; Krecinic, Faruk; Lin, Burn J.

doi:10.1109/vtsa.2009.5159308

Cited by 2 publications

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“…This energy absorption by the lower substrate causes resist CD and image placement errors. Therefore, the wafer heating effect induced by the incident high-energy electrons is a major concern for high throughput MEBML2 at the 22 and 16 nm technology nodes [140].…”

Section: Maskless Lithographymentioning

confidence: 99%

“…These electron beams were individually switched on and off, requiring a massively-parallel e-beam writing tool with high speed optical data transport for switching the e beams [140]. In 2009, these types of tools were installed in IC manufacturing clean rooms.…”

Section: Maskless Lithographymentioning

confidence: 99%

“…The design of this tool enhances resolution pixel-by-pixel. It has been reported that a 22-nm SRAM gate and contact layer patterns were created on a PMMA resist using this technology in 2010 [141,140]. However, the low energy 5 kV electron beam produces a wider forward scattering spread in the resist layer, but a narrower range of backscattering.…”

Section: Maskless Lithographymentioning

confidence: 99%

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Next-generation lithography for 22 and 16 nm technology nodes and beyond

2011

Sci. China Inf. Sci.

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In this paper, next-generation lithography (NGL) for the 22 and 16 nm technology nodes and beyond is reviewed. A broad range of topics, including history, technologies, critical challenges, and the most plausible candidates are discussed. The 22 and 16 nm technology nodes rely on NGL. NGLs have been extensively studied. Because of technological issues, the semiconductor industry has stopped pursuing several NGLs, such as X-ray proximity lithography, ion projection lithography, and scattering with angular limitation projection electron lithography. Currently, the primary candidate technologies are extreme ultraviolet lithography (EUVL), maskless lithography (ML2), and nanoimprint lithography (NIL), with EUVL being the leading candidate. Since EUVL was first proposed in 1988, many studies have been conducted. Currently, there is no "show stopper" for EUVL. Moreover, challenges are present in almost all aspects of EUVL technology. Almost all primary semiconductor manufacturing companies plan to implement commercial pre-production step-and-scan exposure tools in 2011. However, EUVL power at an intermediate focusing level has not yet met the volume manufacturing requirements. EUVL resists have been significantly improved recently, but there is still a critical need to meet requirements on resolution, line width roughness, and sensitivity. Creating a defect-free EUVL mask is another obstacle to the application of EUVL. ML2 and NIL, like EUVL, have also undergone significant progress recently, but throughput, defect control, and cost remain the critical impediments for practical application.

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Section: Maskless Lithographymentioning

confidence: 99%

Section: Maskless Lithographymentioning

confidence: 99%

Section: Maskless Lithographymentioning

confidence: 99%

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Next-generation lithography for 22 and 16 nm technology nodes and beyond

2011

Sci. China Inf. Sci.

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Current and Future Trends for Polymer Micro/Nanoprocessing in Industrial Applications

et al. 2022

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Polymers are widely used in optical devices, electronic devices, energy‐harvesting/storage devices, and sensors, owing to their low weight, excellent flexibility, and simple fabrication process. With advancements in micro/nanoprocessing techniques and more demanding application requirements, it is becoming necessary to realize high‐resolution fabrication of polymers to prepare miniaturized devices. This is particularly because conventional processing technologies suffer from high thermal stress and strong adhesion/friction, which can irreversibly damage the micro/nanostructures of miniaturized devices. In addition, although the use of advanced fabrication methods to prepare high‐resolution micro/nanostructures is explored, these methods are limited to laboratory research or small‐batch production. This review focuses on the micro/nanoprocessing of polymeric materials and devices with high spatial precision and replication accuracy for industrial applications. Specifically, the current state‐of‐the‐art techniques and future trends for micro/nanomolding, high‐energy beam processing, and micro/nanomachining are discussed. Moreover, an overview of the fabrication and applications of various polymer‐based elements and devices such as microlenses, biosensors, and transistors is provided. These techniques are expected to be widely applied for multiscale and multimaterial processing as well as for multifunction integration in next‐generation integrated devices, such as photoelectric, smart, and biodegradable devices.

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Multiple electron beam maskless lithography for high-volume manufacturing

Cited by 2 publications

References 0 publications

Next-generation lithography for 22 and 16 nm technology nodes and beyond

Next-generation lithography for 22 and 16 nm technology nodes and beyond

Current and Future Trends for Polymer Micro/Nanoprocessing in Industrial Applications

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