Quantum dot-metal oxide junctions are an integral part of nextgeneration solar cells, light emitting diodes, and nanostructured electronic arrays. Here we present a comprehensive examination of electron transfer at these junctions, using a series of CdSe quantum dot donors (sizes 2.8, 3.3, 4.0, and 4.2 nm in diameter) and metal oxide nanoparticle acceptors (SnO 2 , TiO 2 , and ZnO). Apparent electron transfer rate constants showed strong dependence on change in system free energy, exhibiting a sharp rise at small driving forces followed by a modest rise further away from the characteristic reorganization energy. The observed trend mimics the predicted behavior of electron transfer from a single quantum state to a continuum of electron accepting states, such as those present in the conduction band of a metal oxide nanoparticle. In contrast with dye-sensitized metal oxide electron transfer studies, our systems did not exhibit unthermalized hot-electron injection due to relatively large ratios of electron cooling rate to electron transfer rate. To investigate the implications of these findings in photovoltaic cells, quantum dot-metal oxide working electrodes were constructed in an identical fashion to the films used for the electron transfer portion of the study. Interestingly, the films which exhibited the fastest electron transfer rates (SnO 2 ) were not the same as those which showed the highest photocurrent (TiO 2 ). These findings suggest that, in addition to electron transfer at the quantum dot-metal oxide interface, other electron transfer reactions play key roles in the determination of overall device efficiency.Marcus theory | transient absorption spectroscopy | quantum dot sensitized solar cell | nanotechnology | energy conversion S emiconducting quantum dots (QDs) are a widely studied material with many interdisciplinary applications (1, 2). Perhaps the most appealing attribute of these materials, from both an academic and industrial perspective, is their size-dependent electronic structure-the ability to design systems and devices with tailor-made electronic properties simply by altering the size of one of the constituent materials (3). As less expensive and less complex routes are continually developed to synthesize a variety of QD materials, further implementation of QDs into nextgeneration devices and procedures is inevitable.The properties of QDs are often exploited in a system or device through their complexation with other materials of interest: functionalizing QDs with biomolecules for imaging (4); linking many QDs together with short-chain molecules to create nanostructured electronic arrays (5); creating highly emissive core-shell QD particles for sensors and optoelectronic displays (6); or sensitizing semiconducting systems with other semiconductors to create inexpensive, next-generation photovoltaic devices (7,8). In each of the aforementioned applications, QDs are utilized because of their size-dependent electronic structure.Although electronic interactions between QDs and organic molecules ...